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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102
作者:  Li MF
收藏  |  浏览/下载：105/7  |  提交时间：2011/07/05
2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang; Tang, Bao; Wang, Guowei; Ren, Zhengwei; Niu, Zhichuan
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14
First principles study of the electronic properties of twinned SiC nanowires 期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:  Li JB
收藏  |  浏览/下载：100/6  |  提交时间：2011/07/05
GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 067801
作者:  Xu YQ
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/08
MU-M  LASER  ISLANDS  
p-type doping of GaInNAs quaternary alloys 期刊论文
physics letters a, 2008, 卷号: 373, 期号: 1, 页码: 165-168
Shi HL; Duan YF
收藏  |  浏览/下载：234/53  |  提交时间：2010/03/08
Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 7, 页码: art. no. 072110
作者:  Wei HY
收藏  |  浏览/下载：83/0  |  提交时间：2010/03/08
Design of shallow acceptors in ZnO: First-principles band-structure calculations 期刊论文
physical review b, 2006, 卷号: 74, 期号: 8, 页码: art.no.081201
Li J (Li Jingbo); Wei SH (Wei Su-Huai); Li SS (Li Shu-Shen); Xia JB (Xia Jian-Bai)
收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11
Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells 会议论文
conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004
Xu Y; Zhu XP; Song GF; Cao Q; Guo L; Li YZ; Chen LH
收藏  |  浏览/下载：164/42  |  提交时间：2010/03/29
Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells 期刊论文
journal of crystal growth, 2005, 卷号: 278, 期号: 1-4, 页码: 558-563
作者:  Xu YQ
收藏  |  浏览/下载：109/23  |  提交时间：2010/03/17
Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation 会议论文
conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004
Xu Y; Zhu XP; Gan QQ; Song GF; Cao Q; Guo, L; Li YZ; Chen LH
收藏  |  浏览/下载：575/277  |  提交时间：2010/03/29

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