p-type doping of GaInNAs quaternary alloys

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	p-type doping of GaInNAs quaternary alloys
	Shi HL ; Duan YF
刊名	physics letters a
	2008
卷号	373 期号:1 页码:165-168
关键词	First-principles Alloy Doping Formation energy Transition energy Band offset
ISSN号	0375-9601
通讯作者	shi hl chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china. e-mail address: hlshi@semi.ac.cn
中文摘要	using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random ga1-xinxn1-yasy quaternary alloys. we show that the mg-ga substitution is a better choice than znga to realize the p-type doping because of the lower transition energy level and lower formation energy. the natural valence band alignment of gaas and gainnas alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing in composition. therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices. (c) 2008 published by elsevier b.v.
学科主题	半导体物理
收录类别	SCI
资助信息	national basic research program of china (973 program) g2009cb929300 national natural science foundation of china 60521001 60776061this work was supported by the national basic research program of china (973 program) grant no. g2009cb929300 and the national natural science foundation of china under grant nos. 60521001 and 60776061.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7465]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Shi HL,Duan YF. p-type doping of GaInNAs quaternary alloys[J]. physics letters a,2008,373(1):165-168.
APA	Shi HL,&Duan YF.(2008).p-type doping of GaInNAs quaternary alloys.physics letters a,373(1),165-168.
MLA	Shi HL,et al."p-type doping of GaInNAs quaternary alloys".physics letters a 373.1(2008):165-168.