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| Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition 期刊论文
ACS Applied Materials & Interfaces, 2017, 卷号: 9, 期号: 44, 页码: 38662-38669
作者: Hong-Yan Chen; Hong-Liang Lu; Jin-Xin Chen; Feng Zhang; Xin-Ming Ji
  收藏 | 浏览/下载：22/0 | 提交时间：2018/06/15 |
| Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer 期刊论文
chinese physics letters, 2014, 卷号: 31, 期号: 12, 页码: 128101
Zhou Xu-Liang; Pan Jiao-Qing; Yu Hong-Yan; Li Shi-Yan; Wang Bao-Jun; Bian Jing; Wang Wei
收藏 | 浏览/下载：13/0 | 提交时间：2015/03/19 |
| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者: Jia CH ; Song HP
收藏 | 浏览/下载：118/2 | 提交时间：2011/07/05
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| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者: Yang T; Yang XG; Wang KF
收藏 | 浏览/下载：63/2 | 提交时间：2011/07/05
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| Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏 | 浏览/下载：36/4 | 提交时间：2011/07/05
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| Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者: Xu B; Zhou GY; Ye XL; Zhang HY
收藏 | 浏览/下载：53/5 | 提交时间：2011/07/05
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| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者: Duan RF
收藏 | 浏览/下载：80/4 | 提交时间：2011/07/05
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| Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708
作者: Zhang XW
收藏 | 浏览/下载：47/3 | 提交时间：2011/07/05
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| Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者: Shi K; Jiao CM; Song HP
收藏 | 浏览/下载：93/7 | 提交时间：2011/07/05
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| Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者: Xu B; Jin P; Ye XL
收藏 | 浏览/下载：63/1 | 提交时间：2011/07/05
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