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CORC

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Modulation of the microstructure, optical, and electrical properties of HfYO gate dielectrics by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: Vol.735, 页码: 1427-1434
作者:  Wang,D.;  Zheng,C. Y.;  Zhu,L.;  Zhang,C.;  Liang,S.
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24
Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.695, 页码: 1591-1599
作者:  Li,W. D.;  Jin,P.;  Wei,H. H.;  Xiao,X. D.;  Gao,J.
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.695, 页码: 2199-2206
作者:  Lv,J. G.;  Fang,Z. B.;  Sun,Z. Q.;  Liu,M.;  Gao,J.
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/22
Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation 期刊论文
Science of Advanced Materials, 2017, 卷号: Vol.9 No.6, 页码: 1057-1063
作者:  Lv,J. G.;  Li,W. D.;  Jin,P.;  Xiao,D. Q.;  Zheng,C. Y.
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/22
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.699, 页码: 415-420
作者:  Li,W. D.;  Lv,J. G.;  Jin,P.;  Xiao,D. Q.;  Wang,P. H.
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.691, 页码: 504-513
作者:  Lv,J. G.;  Jin,P.;  Xiao,D. Q.;  Zheng,C. Y.;  Chen,X. S.
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.704, 页码: 322-328
作者:  Lv,J. G.;  Li,W. D.;  Zheng,C. Y.;  Zhu,L.;  Liang,S.
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/22
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics 期刊论文
CERAMICS INTERNATIONAL, 2017, 卷号: Vol.43 No.3, 页码: 3101-3106
作者:  Li,W. D.;  Jin,P.;  Zhang,M.;  Xiao,D. Q.;  Fang,Z. B.
收藏  |  浏览/下载：15/0  |  提交时间：2019/04/22
Impact of native defects and impurities in m−HfO2 and β−Si3N4 on charge trapping memory devices: A first principle hybrid functional study. 期刊论文
Physica Status Solidi (B), 2017, 卷号: Vol.254 No.2
作者:  Lu,Wenjuan;  Wang,Feifei;  Dai,Yuehua;  Jin,Bo
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/22
Physical mechanism of resistance switching in the co-doped RRAM 期刊论文
Journal of Semiconductors, 2017, 卷号: Vol.38 No.1, 页码: 014008
作者:  Chen,Junning;  Wang,Feifei;  Jiang,Xianwei;  Lu,Shibin;  Dai,Yuehua
收藏  |  浏览/下载：11/0  |  提交时间：2019/04/22

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