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	Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation
	Lv,J. G.; Li,W. D.; Jin,P.; Xiao,D. Q.; Zheng,C. Y.; Gao,J.; He,G.; Jiang,S. S.
刊名	Science of Advanced Materials
	2017
卷号	Vol.9 No.6页码:1057-1063
关键词	TRANSITION-METAL DICHALCOGENIDES RAY PHOTOELECTRON-SPECTROSCOPY CHEMICAL-VAPOR-DEPOSITION MOS2 ATOMIC LAYERS MONOLAYER MOS2 TRANSISTORS ELECTRONICS ALIGNMENTS CIRCUITS GROWTH
ISSN号	1947-2935
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2158149
专题	安徽大学
作者单位	1.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China 2.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Lv,J. G.,Li,W. D.,Jin,P.,et al. Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation[J]. Science of Advanced Materials,2017,Vol.9 No.6:1057-1063.
APA	Lv,J. G..,Li,W. D..,Jin,P..,Xiao,D. Q..,Zheng,C. Y..,...&Jiang,S. S..(2017).Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation.Science of Advanced Materials,Vol.9 No.6,1057-1063.
MLA	Lv,J. G.,et al."Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation".Science of Advanced Materials Vol.9 No.6(2017):1057-1063.

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