CORC

浏览/检索结果: 共57条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Research on the properties of HfO2optical films prepared with APS assisted electron beam evaporation deposition 会议论文
Hangzhou, China, 2021-05-23
作者:  Pan, Yong-Gang;  Liu, Zheng;  Li, Mian;  Liu, Wen-Cheng;  Bai, Long
收藏  |  浏览/下载:45/0  |  提交时间:2021/09/14
Optimization of ultra-high temperature antioxidation coating for C/SiC nozzle 会议论文
Suzhou, China, May 1, 2020 - May 3, 2020
作者:  Kaifeng, Zhang;  Shengzhu, Cao;  Yanlong, Yang;  Yuqing, Xiong;  Hui, Zhou
收藏  |  浏览/下载:4/0  |  提交时间:2020/11/15
Effects of yttrium on wettability and interactions between molten superalloy and SiO2-based ceramic core 会议论文
作者:  Zi, Yun;  Meng, Jie;  Zou, Mingke;  Xu, Wei;  Li, Jinguo
收藏  |  浏览/下载:6/0  |  提交时间:2020/12/18
Fabrication and damage characteristics of low stress HR films for femtosecond laser system 会议论文
Hefei, China, November 26, 2018 - November 28, 2018
作者:  Long, Guoyun;  Zhang, Yaoping
收藏  |  浏览/下载:1/0  |  提交时间:2021/05/06
HfO2 self-rectifying selector in RRAM array 会议论文
14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), OCT 31-NOV 03, 2018
作者:  Zhang, Xinlei;  Ji, Hao;  Jiang, Ran
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/31
HfO2 self-rectifying selector in RRAM array 会议论文
14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018, October 31, 2018 - November 3, 2018
作者:  Zhang, Xinlei;  Ji, Hao;  Jiang, Ran
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/31
Simulation of doping effect for HfO2-based RRAM based on first-principles calculations 会议论文
作者:  Wei W(魏巍);  Chuai XC(揣喜臣);  Lu ND(卢年端);  Wang Y(王艳);  Li L(李泠)
收藏  |  浏览/下载:11/0  |  提交时间:2018/07/26
Endurance characterization of the Cu-dope HfO2 based selection device with One Transistor-One Selector structure 会议论文
作者:  Luo Q(罗庆);  Xu XX(许晓欣);  Lv HB(吕杭炳);  Gong TC(龚天成);  Long SB(龙世兵)
收藏  |  浏览/下载:13/0  |  提交时间:2018/07/26
Ferroelectricity in Al-doped HfO2 on Highly Doped Si Substrate 会议论文
作者:  Bai, Lei;  Liu, Xin;  Cheng, Yonghong;  Mao, Jiale
收藏  |  浏览/下载:4/0  |  提交时间:2019/11/26
Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs 会议论文
作者:  Liu, Qifeng;  Lam, Sang;  Mu, Yifei;  Zhao, Ce Zhou;  Zhao, Yinchao
收藏  |  浏览/下载:13/0  |  提交时间:2019/11/26


©版权所有 ©2017 CSpace - Powered by CSpace