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科研机构
安徽大学 [56]
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期刊论文 [56]
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2019 [1]
2018 [9]
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Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides
期刊论文
Journal of Alloys and Compounds, 2019, 卷号: Vol.778, 页码: 579-587
作者:
Shuang Liang
;
Die Wang
;
Mao Liu
;
Gang He
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/04/24
DyO
gate
dielectrics
High-k
Annealing
temperature
Optical
properties
Electrical
characteristics
Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics
期刊论文
RSC Advances, 2018, 卷号: Vol.8 No.30, 页码: 16788-16799
作者:
Jianguo Lv
;
Li Zhu
;
Elvira Fortunato
;
Gang He
;
Rodrigo Martins
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/04/22
Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics
期刊论文
Journal of Alloys and Compounds, 2018, 卷号: Vol.757, 页码: 288-297
作者:
J.G. Lv
;
Y.M. Liu
;
P.H. Wang
;
S.S. Jiang
;
G. He
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
High-k
gate
dielectrics
HfGdO
Electrical
properties
Metal
oxide
semiconductor
transistors
Leakage
current
density
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing
期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.4
作者:
Wendong Li
;
Shuang Liang
;
Li Zhu
;
Mao Liu
;
Mingliang Tian
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2019/04/22
electrical
properties
forming
gas
annealing
high‐k
gate
dielectrics
interface
chemistry
metal‐oxide‐semiconductor
capacitors
Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters
期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.5
作者:
Wendong Li
;
Li Zhu
;
Elvira Fortunato
;
Bing Yang
;
Gang He
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
eco‐friendly
electronics
electrical
properties
high‐k
gate
dielectrics
thin‐film
transistors
water‐induced
method
Eco-Friendly, Water-Induced IN₂O₃ Thin Films for High-Performance Thin-Film Transistors and Inverters
期刊论文
IEEE Transactions on Electron Devices, 2018, 页码: 1-7
作者:
Jianguo Lv
;
Li Zhu
;
Bing Yang
;
Gang He
;
Yuting Long
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/04/22
Dielectrics
Annealing
Logic
gates
Thin
film
transistors
Indium
Inverters
Surface
morphology
Environmentally
friendly
aqueous
solution
method
high-k
inverter
thin-film
transistor
water-induced
indium
oxide.
Modulation of the microstructure, optical, and electrical properties of HfYO gate dielectrics by annealing temperature
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: Vol.735, 页码: 1427-1434
作者:
Wang,D.
;
Zheng,C. Y.
;
Zhu,L.
;
Zhang,C.
;
Liang,S.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
FLAT-BAND VOLTAGE
HFO2 THIN-FILMS
YTTRIUM
HAFNIUM
Y2O3
FABRICATION
SILICON
STACK
ALD
Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters
期刊论文
RSC ADVANCES, 2018, 卷号: Vol.8 No.64, 页码: 36584-36595
作者:
Chen, Xiaoshuang
;
Li, Wendong
;
He, Gang
;
Zhang, Miao
;
Sun, Zhaoqi
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters
期刊论文
RSC Advances, 2018, 卷号: Vol.8 No.64, 页码: 36584-36595
作者:
Chen, Xiaoshuang
;
Li, Wendong
;
He, Gang
;
Zhang, Miao
;
Sun, Zhaoqi
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters
期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: Vol.65 No.7, 页码: 2870-2876
作者:
Zhu, L
;
He, G
;
Long, YT
;
Lv, JG
;
Yang, B
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
Dielectrics
Annealing
Logic gates
Thin film transistors
Indium
Inverters
Surface morphology
Environmentally friendly aqueous solution method
high-k
inverter
thin-film transistor
water-induced indium oxide
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