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科研机构
半导体研究所 [40]
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期刊论文 [36]
会议论文 [4]
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2013 [1]
2011 [2]
2010 [1]
2009 [4]
2008 [3]
2007 [2]
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学科主题
半导体材料 [40]
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Impact of double-cap procedure on the characteristics of InAs_InGaAsP_InP quantum dots grown by metal-organic chemical vapor deposition
期刊论文
journal of crystal growth, 2013, 卷号: 375, 页码: 100-103
Shuai Luo, Hai-Ming Ji, Xiao-Guang Yang, Tao Yang
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浏览/下载:11/0
  |  
提交时间:2014/02/12
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:
Duan RF
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浏览/下载:80/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells
期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:
Liu K
;
Tan FR
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浏览/下载:87/5
  |  
提交时间:2011/07/05
Polyaniline
Electrodeposition
Thin films
Buffer layers
Solar cells
PHOTOVOLTAIC CELLS
POLYMER
NANOWIRES
EFFICIENCY
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:
Jin P
;
Wei HY
;
Song HP
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浏览/下载:185/32
  |  
提交时间:2010/05/04
alloying
annealing
electrical conductivity
excitons
II-VI semiconductors
magnesium compounds
MOCVD coatings
photoluminescence
positron annihilation
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
SEMICONDUCTORS
EMISSION
ORIGIN
DIODES
Effect of silver growth temperature on the contacts between Ag and ZnO thin films
期刊论文
science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784
作者:
Li XK
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浏览/下载:90/1
  |  
提交时间:2010/03/08
ZnO
Schottky barrier
interface
MSM structure
Growth behavior of AlInGaN films
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477
Shang JZ
;
Zhang BP
;
Mao MH
;
Cai LE
;
Zhang JY
;
Fang ZL
;
Liu BL
;
Yu JZ
;
Wang QM
;
Kusakabe K
;
Ohkawa K
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  |  
浏览/下载:216/66
  |  
提交时间:2010/03/08
Scanning electron microscope
Strain
X-ray diffraction
AlInGaN
Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell
期刊论文
半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 25-28
作者:
Liu Shiyong
;
Peng Wenbo
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  |  
浏览/下载:13/0
  |  
提交时间:2010/11/23
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao J
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浏览/下载:43/4
  |  
提交时间:2011/07/05
ZnO
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
PULSED-LASER DEPOSITION
THIN-FILMS
PLD TECHNIQUE
GROWTH
SAPPHIRE
TEMPERATURE
Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 1, 页码: art. no. 014314
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
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  |  
浏览/下载:75/3
  |  
提交时间:2010/03/08
GAN-BASED LEDS
EFFICIENCY
FABRICATION
IMPROVEMENT
OVERGROWTH
Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates
期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 7, 页码: 1719-1723
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
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  |  
浏览/下载:82/1
  |  
提交时间:2010/03/08
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
IMPROVEMENT
NITRIDE
WET
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