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LiAlH4/碳包覆金属纳米粒子(Ni-Co@C)复合储氢材料及其制备方法 专利
专利类型: 发明, 专利号: CN201210181590.3, 申请日期: 2015-06-10, 公开日期: 2015-06-10
作者:  孙立贤;  焦成丽;  张箭;  徐芬;  司晓亮
收藏  |  浏览/下载:17/0  |  提交时间:2015/11/16
Integrated device, useful in production of ammonia and steam desulfurization, comprises hydrogen sulfide desorption tower whose top and bottom parts are respectively connected to steam reboiler shell and ammonia distillation tower reboiler. 专利
申请日期: 2013-01-01, 公开日期: 2013-11-13
作者:  DONG H HU D ZHANG Y ZHAO G YU B
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/13
Processing light hydrocarbon oil containing chemical gas comprises e.g. contacting light hydrocarbon oil containing chemical gas with absorbent to obtain absorption liquid and lean gas and desorpting absorption liquid in desorption tower. 专利
申请日期: 2012-01-01, 公开日期: 2012-10-17
作者:  GAO X HE G HU J LIU H RUAN X TU W
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/18
Fabrication of multiple-wavelength vertical-cavity opto-electronic device arrays 专利
专利号: US6174749, 申请日期: 2001-01-16, 公开日期: 2001-01-16
作者:  YUEN, WUPEN;  CHANG-HASNAIN, CONSTANCE J.;  LI, GABRIEL S.
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/26
Method of growing multilayer crystal films by metal organic vapor phase epitaxy 专利
专利号: US5785755, 申请日期: 1998-07-28, 公开日期: 1998-07-28
作者:  NAKAMURA, TAKAHIRO;  AE, SATOSHI
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/26
Process for the selective growth of GaAs 专利
专利号: US5185289, 申请日期: 1993-02-09, 公开日期: 1993-02-09
作者:  MEIER, HEINZ P.;  VAN GIESON, EDWARD A.;  WALTER, WILLI
收藏  |  浏览/下载:5/0  |  提交时间:2020/01/18
Process for the selective growth of GaAs 专利
专利号: EP0348540B1, 申请日期: 1993-01-20, 公开日期: 1993-01-20
作者:  MEIER, HEINZ PETER;  GIESON, EDWARD A. VAN;  WALTER, WILLI
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/24
Method for constituting quantum wire semiconductor laser through enhancement of photoinduced vapor deposition during epitaxial growth at original position 专利
专利号: JP1992314376A, 申请日期: 1992-11-05, 公开日期: 1992-11-05
作者:  TOOMASU ERU PAORI;  JIYON II EPURAA
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/31


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