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	Process for the selective growth of GaAs
	MEIER, HEINZ P.; VAN GIESON, EDWARD A.; WALTER, WILLI
	1993-02-09
著作权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
专利号	US5185289
国家	美国
文献子类	授权发明
其他题名	Process for the selective growth of GaAs
英文摘要	The process is particularly useful in the fabrication of GaAs quantum well (QW) laser diodes. Starting point is a ridge-patterned (100)-substrate (21), the crystal orientation of the sidewalls, e.g., (411A)-oriented, being different from that of the horizontal top. The sidewall facets thus have a lower Ga incorporation rate. In a molecular beam epitaxy (MBE) system, the lower AlGaAs cladding layer (22) is first grown, followed by the high-temperature growth of the active GaAs QW (23). Due to diffusion and desorption processes, the GaAs thickness at the sidewalls is smaller than on the horizontal top of the ridge. During a short growth interrupt, the GaAs completely desorbs from the sidewall facets. With the subsequent growth of the upper cladding layer (24), the QW becomes laterally embedded in higher bandgap material providing for lateral electric confinement.
公开日期	1993-02-09
申请日期	1991-06-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89135]
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	MEIER, HEINZ P.,VAN GIESON, EDWARD A.,WALTER, WILLI. Process for the selective growth of GaAs. US5185289. 1993-02-09.

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