已选(0)清除
条数/页: 排序方式:
|
| Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well 期刊论文 nanoscale research letters, 2011, 卷号: 6, 页码: article no.84 Han LF; Zhu YG; Zhang XH; Tan PH; Ni HQ; Niu ZC 收藏  |  浏览/下载:46/2  |  提交时间:2011/07/05
|
| Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文 applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 2, 页码: 335-341 作者: He JF; Li MF 收藏  |  浏览/下载:40/1  |  提交时间:2011/07/05
|
| Band-tail shape and transport near the metal-insulator transition in Si-doped 期刊论文 physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202 Misuraca J (Misuraca Jennifer); Trbovic J (Trbovic Jelena); Lu J (Lu Jun); Zhao JH (Zhao Jianhua); Ohno Y (Ohno Yuzo); Ohno H (Ohno Hideo); Xiong P (Xiong Peng); von Molnar S (von Molnar Stephan) 收藏  |  浏览/下载:24/0  |  提交时间:2010/10/11
|
| Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid 期刊论文 physical review b, 2010, 卷号: 82, 期号: 24, 页码: article no.245423 作者: Tan PH 收藏  |  浏览/下载:78/9  |  提交时间:2011/07/05
|
| Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies 期刊论文 physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125412 Zhang LX (Zhang Lixin); Zhou XF (Zhou Xiang-Feng); Wang HT (Wang Hui-Tian); Xu JJ (Xu Jing-Jun); Li JB (Li Jingbo); Wang EG (Wang E. G.); Wei SH (Wei Su-Huai) 收藏  |  浏览/下载:19/0  |  提交时间:2010/10/11
|
| Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix 期刊论文 physical review b, 2009, 卷号: 80, 期号: 3, 页码: art. no. 035313 Yang CL; Cui XD; Shen SQ; Xu ZY; Ge WK 收藏  |  浏览/下载:66/0  |  提交时间:2010/03/08
|
| Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者: Zhang XW; You JB; Yin ZG 收藏  |  浏览/下载:70/1  |  提交时间:2010/03/08
|
| Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 12, 页码: art. no. 123705 Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB 收藏  |  浏览/下载:82/4  |  提交时间:2010/03/08
|
| Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文 superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59 作者: Zhang ML 收藏  |  浏览/下载:161/57  |  提交时间:2010/03/08
|
| Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文 Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB 收藏  |  浏览/下载:45/0  |  提交时间:2010/03/09
|