Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

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	Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots
	Chen J ; Fan WJ ; Xu Q ; Zhang XW ; Li SS ; Xia JB
刊名	journal of applied physics
	2009
卷号	105 期号:12 页码:art. no. 123705
关键词	EMISSION SPECTRA LASERS 8-BAND
ISSN号	0021-8979
通讯作者	chen j nanyang technol univ sch elect & elect engn singapore 639798 singapore. e-mail address: ewjfan@ntu.edu.sg
中文摘要	the electronic band structures and optical gains of inas1-xnx/gaas pyramid quantum dots (qds) are calculated using the ten-band k . p model and the valence force field method. the optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. with the variation of qd sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. it facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. for qd with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the fermi-dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. for larger qd, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller qd as carrier concentration increases. larger qd can reach its saturation gain faster, but this saturation gain is smaller than that of smaller qd. so the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate qd size according to the specific application requirement. (c) 2009 american institute of physics. [doi 10.1063/1.3143025]
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7117]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen J,Fan WJ,Xu Q,et al. Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots[J]. journal of applied physics,2009,105(12):art. no. 123705.
APA	Chen J,Fan WJ,Xu Q,Zhang XW,Li SS,&Xia JB.(2009).Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots.journal of applied physics,105(12),art. no. 123705.
MLA	Chen J,et al."Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots".journal of applied physics 105.12(2009):art. no. 123705.