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CORC

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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou
收藏  |  浏览/下载：30/0  |  提交时间：2016/03/29
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
european physical journal-applied physics, 2014, 卷号: 68, 期号: 1, 页码: 10105
Qu, SQ; Wang, XL; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Yan, JD; Peng, EC; Kang, H; Wang, ZG; Hou, X
收藏  |  浏览/下载：19/0  |  提交时间：2015/03/20
Impact of double-cap procedure on the characteristics of InAs_InGaAsP_InP quantum dots grown by metal-organic chemical vapor deposition 期刊论文
journal of crystal growth, 2013, 卷号: 375, 页码: 100-103
Shuai Luo, Hai-Ming Ji, Xiao-Guang Yang, Tao Yang
收藏  |  浏览/下载：11/0  |  提交时间：2014/02/12
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:  Xu B
收藏  |  浏览/下载：51/3  |  提交时间：2011/07/05
A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文
ieee transactions on electron devices, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
Liu GP (Liu Guipeng); Wu J (Wu Ju); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Li CM (Li Chengming); Sang L (Sang Ling); Song YF (Song Yafeng); Shi K (Shi Kai); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：11/0  |  提交时间：2012/02/22
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
作者:  Ye XL;  Liang S
收藏  |  浏览/下载：32/4  |  提交时间：2010/03/08
Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1753-1755
Zhao YM (Zhao Yong-Mei); Sun GS (Sun Guo-Sheng); Li JY (Li Jia-Ye); Liu XF (Liu Xing-Fang); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Li JM (Li Jin-Min)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载：166/71  |  提交时间：2010/03/29
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Growth of Space Ordered on GaAs（100） Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 11, 页码: 2074-2079
作者:  Wang Wei;  Liang song;  Pan Jiaoqing;  Wang Wei
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/23
Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 4, 页码: 971-974
作者:  Li DB
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17

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