A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure

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	A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure
	Liu GP (Liu Guipeng) ; Wu J (Wu Ju) ; Lu YW (Lu Yanwu) ; Zhang BA (Zhang Biao) ; Li CM (Li Chengming) ; Sang L (Sang Ling) ; Song YF (Song Yafeng) ; Shi K (Shi Kai) ; Liu XL (Liu Xianglin) ; Yang SY (Yang Shaoyan) ; Zhu QS (Zhu Qinsheng) ; Wang ZG (Wang Zhanguo)
刊名	ieee transactions on electron devices
	2011
卷号	58 期号:12 页码:4272-4275
学科主题	半导体材料
公开日期	2012-02-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22910]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Liu GP ,Wu J ,Lu YW ,et al. A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure[J]. ieee transactions on electron devices,2011,58(12):4272-4275.
APA	Liu GP .,Wu J .,Lu YW .,Zhang BA .,Li CM .,...&Wang ZG .(2011).A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure.ieee transactions on electron devices,58(12),4272-4275.
MLA	Liu GP ,et al."A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure".ieee transactions on electron devices 58.12(2011):4272-4275.