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| Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716 作者: Yin ZG; Zhang XW; Tan HR; Fan YM; Zhang SG 收藏  |  浏览/下载:41/3  |  提交时间:2011/07/05
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| Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502 Wu M; Zeng YP; Wang JX; Hu Q 收藏  |  浏览/下载:49/2  |  提交时间:2011/07/05
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| Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage 期刊论文 physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 3, 页码: 562-566 Liu P; He Y; Zhou JP; Mu CH; Zhang HW 收藏  |  浏览/下载:156/21  |  提交时间:2010/03/08
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| Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文 chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319 Zhou WM; Wang CY; Chen YH; Wang ZG 收藏  |  浏览/下载:47/0  |  提交时间:2010/04/11
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| Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837 Liu XF (Liu Xing-Fang); Sun GS (Sun Guo-Sheng); Li JM (Li Jin-Min); Zhao YM (Zhao Yong-Mei); Li JY (Li Jia-Ye); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载:74/0  |  提交时间:2010/04/11
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| Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文 nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211 作者: Jin P; Ye XL 收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
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| Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots 期刊论文 journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 35-38 Wang HL; Yang FH; Feng SL 收藏  |  浏览/下载:54/0  |  提交时间:2010/08/12
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| Quasi-thermodynamic analysis of MOVPE of AlGaN 期刊论文 journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 73-78 Lu DC; Duan S 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
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| Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy 期刊论文 journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 107-112 Wang HL; Ning D; Zhu HJ; Chen F; Wang H; Wang XD; Feng SL 收藏  |  浏览/下载:43/0  |  提交时间:2010/08/12
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| Si doping effect on self-organized InAs/GaAs quantum dots 期刊论文 journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 603-607 Zhao Q; Feng SL; Ning D; Zhu HJ; Wang ZM; Deng YM 收藏  |  浏览/下载:36/0  |  提交时间:2010/08/12
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