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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载:41/3  |  提交时间:2011/07/05
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M; Zeng YP; Wang JX; Hu Q
收藏  |  浏览/下载:49/2  |  提交时间:2011/07/05
Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 3, 页码: 562-566
Liu P; He Y; Zhou JP; Mu CH; Zhang HW
收藏  |  浏览/下载:156/21  |  提交时间:2010/03/08
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319
Zhou WM; Wang CY; Chen YH; Wang ZG
收藏  |  浏览/下载:47/0  |  提交时间:2010/04/11
Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Liu XF (Liu Xing-Fang); Sun GS (Sun Guo-Sheng); Li JM (Li Jin-Min); Zhao YM (Zhao Yong-Mei); Li JY (Li Jia-Ye); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载:74/0  |  提交时间:2010/04/11
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
作者:  Jin P;  Ye XL
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 35-38
Wang HL; Yang FH; Feng SL
收藏  |  浏览/下载:54/0  |  提交时间:2010/08/12
Quasi-thermodynamic analysis of MOVPE of AlGaN 期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 73-78
Lu DC; Duan S
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy 期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 107-112
Wang HL; Ning D; Zhu HJ; Chen F; Wang H; Wang XD; Feng SL
收藏  |  浏览/下载:43/0  |  提交时间:2010/08/12
Si doping effect on self-organized InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 603-607
Zhao Q; Feng SL; Ning D; Zhu HJ; Wang ZM; Deng YM
收藏  |  浏览/下载:36/0  |  提交时间:2010/08/12


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