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科研机构
半导体研究所 [56]
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会议论文 [56]
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2010 [1]
2008 [3]
2007 [1]
2006 [16]
2005 [2]
2004 [4]
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半导体材料 [40]
光电子学 [7]
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浏览/检索结果:
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STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS
会议论文
34th ieee photovoltaic specialists conference, philadelphia, pa, 2009
Peng WB (Peng Wenbo)
;
Zeng XB (Zeng Xiangbo)
;
Liu SY (Liu Shiyong)
;
Xiao HB (Xiao Haibo)
;
Kong GL (Kong Guanglin)
;
Yu YD (Yu Yude)
;
Liao XB (Liao Xianbo)
收藏
  |  
浏览/下载:252/64
  |  
提交时间:2010/08/16
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
zinc oxide
X-ray diffraction
defects
single crystal
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhao, YW
;
Zhang, F
;
Zhang, R
;
Dong, ZY
;
Wei, XC
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
zinc oxide
defect
vacancy
A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation
会议论文
11th ieee singapore international conference on communication systems, guangzhou, peoples r china, nov 19-21, 2008
Yu, HM
;
Liu, ZL
;
Li, GS
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
Adaptive Filter
equalizer
structure adaptive
fractional tap-length
Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:162/28
  |  
提交时间:2010/03/29
micro-raman
4H-SiC
defects
3C-inclusions
triangle-shaped inclusion
EPITAXIAL LAYERS
SILICON-CARBIDE
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Liu, Z
;
Wang, JX
;
Wang, XL
;
Hu, GX
;
Guo, LC
;
Liu, HX
;
Li, JP
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:222/40
  |  
提交时间:2010/03/29
surface morphology
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
收藏
  |  
浏览/下载:118/30
  |  
提交时间:2010/03/29
HIGH BREAKDOWN VOLTAGE
MOBILITY TRANSISTORS
HETEROSTRUCTURES
SAPPHIRE
GANHEMTS
Defect influence on luminescence efficiency of GaN-based LEDs
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Li SP (Li Shuping)
;
Fang ZL (Fang Zhilai)
;
Chen HY (Chen Hangyang)
;
Li JC (Li Jinchai)
;
Chen XH (Chen Xiaohong)
;
Yuan XL (Yuan Xiaoli)
;
Sekiguchi T (Sekiguchi Takashi)
;
Wang QM (Wang Qiming)
;
Kang JY (Kang Junyong)
收藏
  |  
浏览/下载:470/18
  |  
提交时间:2010/03/29
defects
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC
;
Zhang, SY
;
Ni, HQ
;
Wu, DH
;
He, ZH
;
Sun, Z
;
Han, Q
;
Wu, RG
收藏
  |  
浏览/下载:223/60
  |  
提交时间:2010/03/29
IMPROVED LUMINESCENCE EFFICIENCY
TEMPERATURE
PHOTOLUMINESCENCE
NITROGEN
ORIGIN
DIODES
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Li, Z (Li, Z.)
;
Li, CJ (Li, C. J.)
收藏
  |  
浏览/下载:303/15
  |  
提交时间:2010/03/29
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