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1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG
收藏  |  浏览/下载:222/60  |  提交时间:2010/03/29
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC
收藏  |  浏览/下载:110/24  |  提交时间:2010/03/29
Optical properties of AIInGaN quaternary alloys 会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK
收藏  |  浏览/下载:10/0  |  提交时间:2010/10/29
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002
作者:  Jiang DS
收藏  |  浏览/下载:16/2  |  提交时间:2010/10/29
Observation of the resonant Raman behavior of individual single-walled carbon nanotubes 会议论文
25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000
作者:  Tan PH
收藏  |  浏览/下载:11/0  |  提交时间:2010/10/29
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL
收藏  |  浏览/下载:11/0  |  提交时间:2010/10/29
Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文
9th international conference on high pressure semiconductor physics (hpsp9), sapporo, japan, sep 24-28, 2000
Li GH; Chen Y; Fung ZL; Ding K; Han HX; Zhou W; Wang ZG
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/15
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Jiang DS
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Electronic characteristics of InAs self-assembled quantum dots 会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL; Feng SL; Zhu HJ; Ning D; Chen F
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15


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