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科研机构
半导体研究所 [15]
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会议论文 [15]
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2006 [2]
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半导体物理 [15]
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内容类型:会议论文
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1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC
;
Zhang, SY
;
Ni, HQ
;
Wu, DH
;
He, ZH
;
Sun, Z
;
Han, Q
;
Wu, RG
收藏
  |  
浏览/下载:222/60
  |  
提交时间:2010/03/29
IMPROVED LUMINESCENCE EFFICIENCY
TEMPERATURE
PHOTOLUMINESCENCE
NITROGEN
ORIGIN
DIODES
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS
;
Qu, YH
;
Ni, HQ
;
Wu, DH
;
Xu, YQ
;
Niu, ZC
收藏
  |  
浏览/下载:110/24
  |  
提交时间:2010/03/29
molecular beam epitaxy
Optical properties of AIInGaN quaternary alloys
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS
;
Dong X
;
Luo XD
;
Liu XL
;
Xu ZY
;
Ge WK
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
LIGHT-EMITTING-DIODES
LOCALIZED EXCITONS
LUMINESCENCE
RELAXATION
SILICON
BAND
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells
会议论文
international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002
作者:
Jiang DS
收藏
  |  
浏览/下载:16/2
  |  
提交时间:2010/10/29
LUMINESCENCE
LOCALIZATION
Observation of the resonant Raman behavior of individual single-walled carbon nanotubes
会议论文
25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000
作者:
Tan PH
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
ELECTRIC-ARC TECHNIQUE
LARGE-SCALE
SCATTERING
SPECTRA
STOKES
MODES
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC
;
Wang XD
;
Miao ZH
;
Lan Q
;
Kong YC
;
Zhou DY
;
Feng SL
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
molecular beam epitaxy
InGaAs islands
photolumineseence
line-width
1.3 MU-M
INAS/GAAS QUANTUM DOTS
OPTICAL-PROPERTIES
CAP LAYER
GAAS
LUMINESCENCE
STRAIN
Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots
会议论文
9th international conference on high pressure semiconductor physics (hpsp9), sapporo, japan, sep 24-28, 2000
Li GH
;
Chen Y
;
Fung ZL
;
Ding K
;
Han HX
;
Zhou W
;
Wang ZG
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
HYDROSTATIC-PRESSURE
PHOTOLUMINESCENCE
GAAS
LUMINESCENCE
GROWTH
INSB
GASB
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:
Jiang DS
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
quantum wells
semiconducting IIIV materials
LUMINESCENCE
GAASN
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
ENERGY-LEVELS
SPECTROSCOPY
Electronic characteristics of InAs self-assembled quantum dots
会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
InAs/GaAs quantum dots
self-assembled structure
DLTS
PL
band offset
ENERGY-LEVELS
CARRIER RELAXATION
SPECTROSCOPY
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