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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse 期刊论文 ACS NANO, 2021, 卷号: 15 作者:  Tan, Chaoyang;  Yin, Shiqi;  Chen, Jiawang;  Lu, Yuan;  Wei, Wensen 收藏  |  浏览/下载：68/0  |  提交时间：2021/08/31 van der Waals heterostructure  backward tunneling diode  reverse rectification ratio  photodetector  broken-gap band alignment   Broken-Gap Type-III Band Alignment in WTe2/HfS2 van der Waals Heterostructure 期刊论文 JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 卷号: 123, 期号: 37, 页码: 23089-23095 作者:  Lei, Chengan;  Ma, Yandong;  Xu, Xilong;  Zhang, Ting;  Huang, Baibiao 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/11 Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties 期刊论文 PHYSICAL REVIEW B, 2017 Vinas, Florinda; Xu, H. Q.; Leijnse, Martin 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 INAS NANOWIRES  GASB  HETEROSTRUCTURES  CONDUCTANCE  INAS/GASB  MODEL  FIELD  GAAS   Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions 期刊论文 应用物理学快报, 2014 Li, Wei; Zhang, Qin; Bijesh, R.; Kirillov, Oleg A.; Liang, Yiran; Levin, Igor; Peng, Lian-Mao; Richter, Curt A.; Liang, Xuelei; Datta, S.; Gundlach, David J.; Nguyen, N. V. 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/11 PERFORMANCE  DEVICES  ENERGY  GASB  DEPENDENCE  INTERFACE  GRAPHENE  SIO2  FETS   Complete band alignment determination of InAs-GaSb broken-gap tunneling field-effect transistor hetero-junction 其他 2013-01-01 Li, W.; Zhang, Q.; Kirillov, O.A.; Bijesh, R.; Liang, Y.; Mohata, D.; Tian, B.; Liang, X.; Datta, S.; Richter, C.A.; Gundlach, D.J.; Nguyen, N.V. 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/17