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Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
期刊论文
SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7
作者:
Yang, GG (Yang, Guangan)[ 1 ]
;
Wu, WR (Wu, Wangran)[ 1 ]
;
Zhang, XY (Zhang, Xingyao)[ 2 ]
;
Tang, PY (Tang, Pengyu)[ 1 ]
;
Yang, J (Yang, Jing)[ 1 ]
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/03/15
SOI-LIGBT
Total-ionizing-dose
Radiation
Degradation
Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 卷号: 976, 页码: 10
作者:
Peng, Lisha
;
Shen, Wanzeng
;
Feng, Anhui
;
Liu, Yan
;
Gao, Daqing
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/12/09
IGBT module
Junction temperature
Thermal network
CFD simulation
Cold plate
Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139
期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
作者:
Yao, S (Yao, Shuai)[ 1,2,3 ]
;
Lu, W (Lu, Wu)[ 1,2,4 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1,2 ]
;
Li, XL (Li, Xiaolong)[ 1,2,3 ]
收藏
  |  
浏览/下载:83/0
  |  
提交时间:2019/02/25
Enhanced low dose rate sensitivity
single event transient
bipolar voltage comparator
synergistic effect
Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self-Organized Molecular Anions
期刊论文
Advanced Materials Interfaces, 2019, 卷号: 6
作者:
Zhang, Yong
;
Hu, Guangliang
;
Gong, Maogang
;
Alamri, Mohammed
;
Ma, Chunrui
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/11/19
BMP-TFSI ionic liquid
graphene field effect transistor
lateral p&ndash
n junctions
oxide ferroelectric
surface electric dipoles
Assessing electric vehicle inverter to reduce energy consumption: using insulated gate bipolar transistor module to prevent the power loss and junction temperature
期刊论文
JOURNAL OF CLEANER PRODUCTION, 2019, 卷号: 224, 页码: 60-71
作者:
Li, Ling-Ling
;
Chang, Ji-Dong
;
Wu, Kuo-Jui
;
Tseng, Ming-Lang
;
Li, Zhi-Gang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
Electric vehicle
Insulated gate bipolar transistor module
Switching cycle
Average power loss
Junction temperature
An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802
作者:
Jun Wang
;
Shiwei Liang
;
Linfeng Deng
;
Xin Yin
;
Z. John Shen
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/13
Silicon carbide
Predictive models
Spontaneous emission
Junctions
SPICE
Temperature
Numerical models
Bipolar junction transistor (BJT)
proportional base driver
SPICE model
surface recombination effect
4H-SiC
An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802
作者:
Wang, J
;
Liang, SW
;
Deng, LF
;
Yin, X
;
Shen, ZJ
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/17
Bipolar junction transistor (BJT)
proportional base driver
SPICE model
surface recombination effect
4H-SiC
A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395
作者:
Xiaorong Luo
;
Yang Yang
;
Tao Sun
;
Jie Wei
;
Diao Fan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/17
Anodes
Resistance
Current density
Silicon-on-insulator
Insulated gate bipolar transistors
Spontaneous emission
Sun
Low-loss
p-type polysilicon
self-adaptive resistance (SAR)
shorted-anode (SA)
snapback-free
silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)
An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect.
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802
作者:
Wang, J
;
Liang, SW
;
Deng, LF
;
Yin, X
;
Shen, ZJ
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
4H-SiC
Bipolar junction transistor (BJT)
Junctions
Numerical models
Predictive models
proportional base driver
Silicon carbide
SPICE
SPICE model
Spontaneous emission
surface recombination effect
Temperature
Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs
期刊论文
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 卷号: Vol.7 No.3, 页码: 1615-1626
作者:
Zeng, Z
;
Wang, J
;
Li, F
;
Yin, X
;
Shen, ZJ
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
Finite-element (FE) analysis
insulated gate bipolar transistor (IGBT)
large die
pressure contact package
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