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Radiation impact of swift heavy ion beams on double-interface CoFeB/MgO magnetic tunnel junctions 期刊论文
APPLIED PHYSICS LETTERS, 2020, 卷号: 116, 期号: 17, 页码: 5
作者:  Wang, Bi;  Wang, Zhaohao;  Du, Ao;  Qiang, You;  Cao, Kaihua
收藏  |  浏览/下载：22/0  |  提交时间：2022/01/18
Novel metallization processes for sub-100 nm magnetic tunnel junction devices 期刊论文
Microelectronic Engineering, 2019
作者:  Kaihua Cao;  Hushan Cui;  Youguang Zhang;  Huagang Xiong;  Jiaqi Wei
收藏  |  浏览/下载：34/0  |  提交时间：2019/12/17
Novel metallization processes for sub-100 nm magnetic tunnel junction devices 期刊论文
Microelectronic Engineering, 2019, 卷号: Vol.209, 页码: 6-9
作者:  Kaihua Cao;  Hushan Cui;  Youguang Zhang;  Huagang Xiong;  Jiaqi Wei
收藏  |  浏览/下载：34/0  |  提交时间：2019/12/17
Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM 会议论文
IEEE/IFIP International Conference on VLSI and System-on-Chip, VLSI-SoC, 2018-10-08
作者:  Deng, E.;  Wang, Z.;  Kang, W.;  Wei, S.;  Zhao, W.
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30
Novel metallization processes for sub-100 nm magnetic tunnel junction devices 期刊论文
MICROELECTRONIC ENGINEERING, 2019, 卷号: 209, 页码: 6-9
作者:  Cao, Kaihua;  Cui, Hushan;  Zhang, Youguang;  Xiong, Huagang;  Wei, Jiaqi
收藏  |  浏览/下载：33/0  |  提交时间：2019/12/30
Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory 会议论文
Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018, 2018-11-21
作者:  Zhang, Yue;  Wang, Guanda;  Huang, Zhe;  Zhang, Zhizhong;  Wang, Jinkai
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30
Compact Model for Negative Capacitance Enhanced Spintronics Devices 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2795-2801
作者:  Gao, Tianqi;  Zeng, Lang;  Zhang, Deming;  Zhang, Youguang;  Wang, Kang L.
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/30
Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 页码: 1700461
作者:  Zhang, Yu;  Lin, Xiaoyang;  Adam, Jean-Paul;  Agnus, Guillaume;  Kang, Wang
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/30
Demonstration of Multi-State Memory Device Combining Resistive and Magnetic Switching Behaviors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 页码: 684-687
作者:  Zhang, Yu;  Cai, Wenlong;  Kang, Wang;  Yang, Jianlei;  Deng, Erya
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/30
Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 页码: 440-443
作者:  Wang, Lezhi;  Kang, Wang;  Ebrahimi, Farbod;  Li, Xiang;  Huang, Yangqi
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/30

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