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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures 期刊论文 AIP ADVANCES, 2020, 卷号: 10, 期号: 6, 页码: 065122 作者:  Jianxing Xu;   Xiaodong Tong;   Shiyong Zhang;   Zhe Cheng;   Lian Zhang;   Penghui Zheng;   Feng-Xiang Chen;   Rong Wang;   Yun Zhang;   Wei Tan 收藏  |  浏览/下载：16/0  |  提交时间：2021/06/16 Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials 期刊论文 acta physica sinica, 2013, 卷号: 62, 期号: 11, 页码: 117303 Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An 收藏  |  浏览/下载：20/0  |  提交时间：2014/04/09 Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers 期刊论文 journal of semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 99-102 Zheng Zhongshan; Liu Zhongli; Li Ning; Li Guohua; Zhang Enxia 收藏  |  浏览/下载：17/0  |  提交时间：2011/08/16 Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Li, N; Zhang, GQ; Liu, ZL; Fan, K; Zheng, ZS; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：127/22  |  提交时间：2010/03/29 SIMOX  fluorine  ionizing radiation   Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K 收藏  |  浏览/下载：167/30  |  提交时间：2010/03/29 Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Zhang, GQ; Liu, ZL; Li, N; Zhen, ZS; Liu, GH; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：141/31  |  提交时间：2010/03/29 fluorine  SIMOX  charge trapping  radiation  SIO2   2.0-mev er+ implanted in silicon: depth distribution, damage profile and annealing behaviour 期刊论文 Applied physics a-materials science & processing, 2000, 卷号: 71, 期号: 6, 页码: 689-693 作者:  Li, Y;  Tan, C;  Xia, Y;  Zhang, J;  Xue, C 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 A comprehensive abatement technology for arsine, phosphorus, sulfur, fluorine, chlorine, oxynitrides and heavy metals in semiconductor industry waste water and gases 期刊论文 chinese journal of electronics, 2000, 卷号: 9, 期号: 1, 页码: 11-11 Wen RM 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 A comprehensive abatement technology for arsine, phosphorus, sulfur, fluorine, chlorine, oxynitrides and heavy metals in semiconductor industry waste water and gases 期刊论文 Chinese journal of electronics, 2000, 卷号: 9, 期号: 1, 页码: 11-11 作者:  Wen, RM 收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12