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科研机构
半导体研究所 [66]
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期刊论文 [57]
会议论文 [9]
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2013 [2]
2011 [6]
2010 [3]
2009 [4]
2008 [2]
2007 [2]
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半导体材料 [66]
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Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with an etching ion-implantation buffer layer
期刊论文
chinese optics letters, 2015, 卷号: 13, 期号: 8, 页码: 081301
Liangshun Han
;
Song Liang
;
Hongliang Zhu
;
Wei Wang
收藏
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浏览/下载:21/0
  |  
提交时间:2016/03/23
Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting
期刊论文
journal of semiconductors, 2013, 卷号: 34, 期号: 6, 页码: 063001
Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang
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  |  
浏览/下载:20/0
  |  
提交时间:2014/05/08
Raman Spectra Analysis of GaN : Er Films Prepared by Ion Implantation
期刊论文
spectroscopy and spectral analysis, 2013, 卷号: 33, 期号: 3, 页码: 699-703
Tao Dong-yan
;
Liu Chao
;
Yin Chun-hai
;
Zeng Yi-ping
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  |  
浏览/下载:12/0
  |  
提交时间:2013/09/17
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L
;
Zhou, HY
;
Qu, SC
;
Wang, ZG
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  |  
浏览/下载:91/0
  |  
提交时间:2012/02/06
Patterned substrate
Ion implantation
Ordered nanodots
Anodic aluminum oxide
QUANTUM DOTS
ISLANDS
GROWTH
SEMICONDUCTORS
NANOSTRUCTURES
COMPUTATION
INGAAS
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Xu B
;
Jin P
;
Ye XL
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  |  
浏览/下载:63/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
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  |  
浏览/下载:28/0
  |  
提交时间:2012/06/14
Aluminum
Annealing
Ion implantation
Pressure effects
Semiconducting silicon compounds
Silicon carbide
Surface roughness
The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films
期刊论文
materials letters, 2011, 卷号: 65, 期号: 4, 页码: 667-669
作者:
Liu C
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浏览/下载:62/7
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提交时间:2011/07/05
Diluted magnetic semiconductors (DMSs)
Ion implantation
Room-temperature ferromagnetic properties
ROOM-TEMPERATURE
Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 102002
Tan, Hairen
;
You, Jingbi
;
Zhang, Shuguang
;
Gao, Hongli
;
Yin, Zhigang
;
Bai, Yiming
;
Zhang, Xiulan
;
Zhang, Xingwang
;
Qu, Sheng
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  |  
浏览/下载:10/0
  |  
提交时间:2012/06/14
Metallic films
Plasmons
Silicides
Zinc oxide
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
会议论文
16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010
阎Zhou HY (Zhou Huiying)
;
Qu SC (Qu Shengchun)
;
Jin P (Jin Peng)
;
Xu B (Xu Bo)
;
Ye XL (Ye Xiaoling)
;
Liu JP (Liu Junpeng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2011/07/26
Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb
期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095010
Islam MR (Islam M. R.)
;
Hasan MM (Hasan M. M.)
;
Chen N (Chen N.)
;
Fukuzawa M (Fukuzawa M.)
;
Yamada M (Yamada M.)
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  |  
浏览/下载:260/25
  |  
提交时间:2010/09/20
DILUTED MAGNETIC SEMICONDUCTORS
PHONON
FERROMAGNETISM
TEMPERATURE
GA1-XMNXAS
SPECTRA
STRAIN
LAYERS
GAAS
SPIN
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