Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting

	Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting
	Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang
刊名	journal of semiconductors
	2013
卷号	34 期号:6 页码:063001
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2014-05-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24897]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang. Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting[J]. journal of semiconductors,2013,34(6):063001.
APA	Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang.(2013).Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting.journal of semiconductors,34(6),063001.
MLA	Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang."Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting".journal of semiconductors 34.6(2013):063001.