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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
Polarization-independent plasmonic subtractive color filtering in ultrathin Ag nanodisks with high transmission 期刊论文
applied optics, 2016, 卷号: 55, 期号: 1, 页码: 148-152
X. L. HU; L. B. SUN; BEIBEI ZENG; L. S. WANG; Z. G. YU; S. A. BAI; S. M. YANG; L. X. ZHAO; Q. LI; M. QIU; R. Z. TAI; H. J. FECHT; J. Z. JIANG; D. X. ZHANG
收藏  |  浏览/下载:18/0  |  提交时间:2017/03/16
Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
journal of applied physics, 2015, 卷号: 117, 期号: 1, 页码: 014304
P. Y. Zhou; X. F. Wu; K. Ding; X. M. Dou; G. W. Zha; H. Q. Ni; Z. C. Niu; H. J. Zhu; D. S. Jiang; C. L. Zhao; B. Q. Sun
收藏  |  浏览/下载:21/0  |  提交时间:2016/03/29
The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 16, 页码: 163708
Li, X. J.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Le, L. C.; Yang, J.; He, X. G.; Zhang, S. M.; Zhang, B. S.; Liu, J. P.; Yang, H.
收藏  |  浏览/下载:19/0  |  提交时间:2015/03/19
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 085017
Wu LL (Wu, L. L.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Chen P (Chen, P.); Le LC (Le, L. C.); Li L (Li, L.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang BS (Zhang, B. S.); Yang H (Yang, H.)
收藏  |  浏览/下载:7/0  |  提交时间:2013/04/02
Properties investigation of gan films implanted by sm ions under different implantation and annealing conditions 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 1, 页码: 429-432
作者:  Jiang, L. J.;  Wang, X. L.;  Xiao, H. L.;  Wang, Z. G.;  Yang, C. B.
收藏  |  浏览/下载:23/0  |  提交时间:2019/05/12
Growth and characterization of algan/gan heterostructure using unintentionally doped aln/gan superlattices as barrier layer 期刊论文
Superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:  Zhang, M. L.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Yang, C. B.
收藏  |  浏览/下载:29/0  |  提交时间:2019/05/12
Investigation of responsivity decreasing with rising bias voltage in a gan schottky barrier photodetector 期刊论文
Semiconductor science and technology, 2008, 卷号: 23, 期号: 10, 页码: 6
作者:  Zhang, Shuang;  Zhao, D. G.;  Jiang, D. S.;  Liu, W. B.;  Duan, L. H.
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
Investigation on the structural origin of n-type conductivity in inn films 期刊论文
Journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: 5
作者:  Wang, H.;  Jiang, D. S.;  Wang, L. L.;  Sun, X.;  Liu, W. B.
收藏  |  浏览/下载:29/0  |  提交时间:2019/05/12
Effect of annealing on photoluminescence properties of neon implanted gan 期刊论文
Journal of physics d-applied physics, 2008, 卷号: 41, 期号: 2, 页码: 5
作者:  Majid, Abdul;  Ali, Akbar;  Zhu, J. J.;  Wang, Y. T.;  Liu, W.
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12


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