The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

	The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes
	P. Chen ; D. G. Zhao ; D. S. Jiang ; J. J. Zhu ; Z. S. Liu ; J. Yang ; X. Li ; L. C. Le ; X. G. He ; W. Liu ; X. J. Li ; F. Liang ; B. S. Zhang ; H. Yang ; Y. T. Zhang ; G. T. Du
刊名	aip advances
	2016
卷号	6 页码:035124
学科主题	光电子学
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27856]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	P. Chen,D. G. Zhao,D. S. Jiang,et al. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes[J]. aip advances,2016,6:035124.
APA	P. Chen.,D. G. Zhao.,D. S. Jiang.,J. J. Zhu.,Z. S. Liu.,...&G. T. Du.(2016).The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes.aip advances,6,035124.
MLA	P. Chen,et al."The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes".aip advances 6(2016):035124.