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Luminescence lifetime enhanced by exciton-plasmon couple in hybrid CsPbBr3 perovskite Pt nanostructure 期刊论文
Materials Research Express, 2018, 卷号: 5, 期号: 2, 页码: 9
作者:  Liu, C. X.;  Zhang, J. S.;  Chen, Y. Y.;  Jing, P. T.;  Zhang, L. G.
收藏  |  浏览/下载：5/0  |  提交时间：2019/09/17
Luminescence Lifetime Enhanced by Exciton-plasmon Couple in Hybrid CsPbBr3Perovskite/Pt Nanostructure 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2017, 卷号: 38, 期号: 12
作者:  Liu, C.-X.;  J.-S. Zhang;  Y.-Y. Chen;  P.-T. Jing;  L.-G. Zhang
收藏  |  浏览/下载：17/0  |  提交时间：2018/06/13
Effect of oxygen partial pressure and anneal temperature: On BaTiO3thin film crystal structure 会议论文
International Symposium on Photonics and Optoelectronics, Shanghai, August 22
作者:  Zhang, Jing;  Sun, De-Gui;  Fu, Xiuhua;  Liu, Dong-Mei;  Pan, Yong-Gang
收藏  |  浏览/下载：17/0  |  提交时间：2016/07/18
Novel cell parameter determination of a twisted-nematic liquid crystal display 期刊论文
Chinese Physics B, 2008, 卷号: 17, 期号: 3, 页码: 950-953
Huang X.; Jing H.; Fu G. Z.
收藏  |  浏览/下载：9/0  |  提交时间：2012/10/21
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  
Novel fast measurement method of twist angle and optical retardation of liquid crystal display 会议论文
2007
Huang X.; Lu Y. T.; Kong X. J.; Jing H.; Fu G. Z.; Jin H.; East China Normal Unviersity P.
收藏  |  浏览/下载：9/0  |  提交时间：2013/03/28
The effect of N/Si ratio on the a-Si : H/SiNx interface of a-Si : H/SiNx TFT 会议论文
2007
Liu J. E.; Gao W. T.; Liao Y. P.; Jing H.; Fu G. Z.; East China Normal Unviersity P.
收藏  |  浏览/下载：14/0  |  提交时间：2013/03/28
Study of the fabrication of ZnO-TFT (EI CONFERENCE) 会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Wang C.; Yang X. T.; Zhu H. C.; Ma X. M.; Fu G. Z.; Jing H.; Chang Y. C.; Du G. T.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
Novel fast measurement method of twist angle and optical retardation of liquid crystal display (EI CONFERENCE) 会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Huang X.; Lu Y.-T.; Kong X.-J.; Jing H.; Fu G.-Z.; Jin H.
收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25
A novel method is proposed to measure twist angle and optical retardation of liquid crystal display in this paper. The new method which is one of single-wavelength methods has three characteristics  introducing a method of measuring the total intensity ratio of the transmitted light to eliminate the influence of absorption by the polarizer  using circularly and homogeneously aligned LC cell (CH-LC) as a unique polarization-converting device  analyzer  using variable sector diaphragm and photodetector to detect the total intensity of transmitted light whose original polarization direction is continuously changed from 0 to arbitrary angle  CH-LC  liquid crystal display and so on. The twist angle () and optical retardation (nd) can be derived by using Jones matrix analysis and a curve fitting where and nd are fitting parameters. Experiment proved the results are accurate  the process of operation is fast  the devices are economical.  
The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Yang X. T.; Ma X. M.; Zhu H. C.; Gao W. T.; Jin H.; Qi X. W.; Gao B.; Dong X. R.; Fu G. Z.; Jing H.; Wang C.; Chang Y. C.; Du G. T.; Cao J. L.
收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25

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