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	The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE)
	Yang X. T. ; Ma X. M. ; Zhu H. C. ; Gao W. T. ; Jin H. ; Qi X. W. ; Gao B. ; Dong X. R. ; Fu G. Z. ; Jing H. ; Wang C. ; Chang Y. C. ; Du G. T. ; Cao J. L.
	2007
会议名称	Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007
会议地点	Shanghai, China
关键词	Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.
页码	671-673
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/33507]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Yang X. T.,Ma X. M.,Zhu H. C.,et al. The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE)[C]. 见:Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007. Shanghai, China.

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