CORC

浏览/检索结果: 共5条,第1-5条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current 期刊论文
ELECTRONICS LETTERS, 2018
作者:  Wang, Qilong;  Zhang, Bingliang;  Du, Zhongkai;  Zhao, Jie(赵杰);  Chen, Fu(陈扶)
收藏  |  浏览/下载:87/0  |  提交时间:2019/03/27
Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs 期刊论文
AIP ADVANCES, 2018
作者:  Fan, Yaming(范亚明);  Song, Liang(宋亮);  Cai, Yong(蔡勇);  Zhang, Baoshun(张宝顺);  Zhao, Jie
收藏  |  浏览/下载:65/0  |  提交时间:2019/03/27
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018
作者:  Deng, Xuguang(邓旭光);  Li, Xiang;  Xu, Ning;  Hao, Ronghui(郝荣晖);  Zhang, Xinping
收藏  |  浏览/下载:48/0  |  提交时间:2019/03/27
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors 期刊论文
APPLIED PHYSICS LETTERS, 2018
作者:  Ding, Xiaoyu;  Yu, Guohao;  Cheng, Kai;  Cai, Yong;  Zhang, Baoshun(张宝顺)
收藏  |  浏览/下载:30/0  |  提交时间:2019/03/27
Solution-Processed 8-Hydroquinolatolithium as Effective Cathode Interlayer for High-Performance Polymer Solar Cells 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2016, 卷号: 8, 期号: 14
作者:  Liu, WQ;  Liang, T;  Chen, Q;  Yu, ZK;  Zhang, YY
收藏  |  浏览/下载:26/0  |  提交时间:2017/03/11


©版权所有 ©2017 CSpace - Powered by CSpace