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GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers* 期刊论文
CHINESE PHYSICS B, 2021, 卷号: 30, 期号: 9, 页码: 94204
作者:  Zhang, Yi;   Yang, Cheng-Ao;   Shang, Jin-Ming;   Chen, Yi-Hang;   Wang, Tian-Fang;   Zhang, Yu;   Xu, Ying-Qiang;   Liu, Bing;   Niu, Zhi-Chuan
收藏  |  浏览/下载：16/0  |  提交时间：2022/03/24
Theoretical analysis on the energy band properties of N- and M-structure type-II superlattices 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2020, 卷号: 145, 页码: 106590
作者:  Ya-nan Du;   Yun Xu;   Guo-feng Song
收藏  |  浏览/下载：8/0  |  提交时间：2021/05/25
A type-II GaSe/HfS 2 van der Waals heterostructure as promising photocatalyst with high carrier mobility 期刊论文
Applied Surface Science, 2020, 卷号: 534, 页码: 147607
作者:  Obeid, MM (Obeid, Mohammed M.);   Bafekry, A (Bafekry, Asadollah);   Rehman, SU (Rehman, Sajid Ur);   Nguyen, CV (Nguyen, Chuong, V)
收藏  |  浏览/下载：9/0  |  提交时间：2021/05/21
Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs 期刊论文
Journal of Luminescence, 2020, 卷号: 228, 页码: 117539
作者:  Linzhi Peng ;   Xiuli Li ;   Jun Zheng ;   Xiangquan Liu ;   Mingming Li ;   Zhi Liu ;   Chunlai Xue ;   Yuhua Zuo ;   Buwen Cheng
收藏  |  浏览/下载：4/0  |  提交时间：2021/05/24
Impact of device parameters on performance of one-port type saw resonators on aln/sapphire 期刊论文
Journal of micromechanics and microengineering, 2018, 卷号: 28, 期号: 8
作者:  Yang,Shuai;  Ai,Yujie;  Zhang,Yun;  Cheng,Zhe;  Zhang,Lian
收藏  |  浏览/下载：78/0  |  提交时间：2019/05/12
Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 765, 页码: 245-248
作者:  H.R. Qi ;   L.K. Yi ;   J.L. Huang ;   S.T. Liu ;   F. Liang ;   M. Zhou ;   D.G. Zhao ;   D.S. Jiang
收藏  |  浏览/下载：18/0  |  提交时间：2019/11/19
Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector 期刊论文
APPLIED PHYSICS LETTERS, 2017, 卷号: 108, 页码: 152404
作者:  B. S. Tao;  P. Barate;  J. Frougier;  P. Renucci;  B. Xu
收藏  |  浏览/下载：28/0  |  提交时间：2018/05/30
Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers 期刊论文
IEEE Electron Device Letters, 2016, 卷号: 37, 期号: 9, 页码: 1166 - 1169
Yanhua Zhang; Wenquan Ma; Jianliang Huang; Yulian Cao; Ke Liu; Wenjun Huang; Chengcheng Zhao; Haiming Ji; Tao Yang
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10
Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning 期刊论文
Nanoscale, 2015, 卷号: 7, 期号: 23, 页码: 10513-10518
H.D. Zhang; M. Yu; J.C. Zhang; C.H. Sheng; X. Yan; W.P. Han; Y.C. Liu; S. Chen; G.Z. Shen; Y.Z. Long
收藏  |  浏览/下载：16/0  |  提交时间：2016/03/29
Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN 期刊论文
semiconductor science and technology, 2013, 卷号: 28, 期号: 10, 页码: 105020
L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang
收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09

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