Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning

	Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning
	H.D. Zhang ; M. Yu ; J.C. Zhang ; C.H. Sheng ; X. Yan ; W.P. Han ; Y.C. Liu ; S. Chen ; G.Z. Shen ; Y.Z. Long
刊名	Nanoscale
	2015
卷号	7 期号:23 页码:10513-10518
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2016-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26879]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	H.D. Zhang,M. Yu,J.C. Zhang,et al. Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning[J]. Nanoscale,2015,7(23):10513-10518.
APA	H.D. Zhang.,M. Yu.,J.C. Zhang.,C.H. Sheng.,X. Yan.,...&Y.Z. Long.(2015).Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning.Nanoscale,7(23),10513-10518.
MLA	H.D. Zhang,et al."Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning".Nanoscale 7.23(2015):10513-10518.