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科研机构
安徽大学 [11]
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期刊论文 [11]
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2018 [5]
2017 [1]
2016 [1]
2015 [2]
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2011 [1]
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Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter
期刊论文
Journal of Alloys and Compounds, 2018
作者:
Q.B. Lin
;
C. Zhang
;
G. He
;
B. Yang
;
L. Zhu
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
Sputtering
Oxygen
partial
pressure
ratio
α-IGZO
Thin
film
transistors
Inverter
Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics
期刊论文
RSC Advances, 2018, 卷号: Vol.8 No.30, 页码: 16788-16799
作者:
Jianguo Lv
;
Li Zhu
;
Elvira Fortunato
;
Gang He
;
Rodrigo Martins
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/04/22
Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters
期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.5
作者:
Wendong Li
;
Li Zhu
;
Elvira Fortunato
;
Bing Yang
;
Gang He
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
eco‐friendly
electronics
electrical
properties
high‐k
gate
dielectrics
thin‐film
transistors
water‐induced
method
Eco-Friendly, Water-Induced IN₂O₃ Thin Films for High-Performance Thin-Film Transistors and Inverters
期刊论文
IEEE Transactions on Electron Devices, 2018, 页码: 1-7
作者:
Jianguo Lv
;
Li Zhu
;
Bing Yang
;
Gang He
;
Yuting Long
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/04/22
Dielectrics
Annealing
Logic
gates
Thin
film
transistors
Indium
Inverters
Surface
morphology
Environmentally
friendly
aqueous
solution
method
high-k
inverter
thin-film
transistor
water-induced
indium
oxide.
Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters
期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: Vol.65 No.7, 页码: 2870-2876
作者:
Zhu, L
;
He, G
;
Long, YT
;
Lv, JG
;
Yang, B
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
Dielectrics
Annealing
Logic gates
Thin film transistors
Indium
Inverters
Surface morphology
Environmentally friendly aqueous solution method
high-k
inverter
thin-film transistor
water-induced indium oxide
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.699, 页码: 415-420
作者:
Li,W. D.
;
Lv,J. G.
;
Jin,P.
;
Xiao,D. Q.
;
Wang,P. H.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
THIN-FILM TRANSISTORS
HIGH-PERFORMANCE
LOW-TEMPERATURE
HYBRID FILMS
FABRICATION
DEPOSITION
CONSTANT
OXIDES
STACK
HFO2
Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: Vol.679, 页码: 115-121
作者:
Chen,X. F.
;
Lv,J. G.
;
Jin,P.
;
Zhang,J. W.
;
Xiao,D. Q.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
THIN-FILM TRANSISTORS
TEMPERATURE
DEPOSITION
LAYER
STACK
Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy
期刊论文
Journal of Alloys and Compounds, 2015, 卷号: Vol.642, 页码: 172-176
作者:
J.G. Lv
;
X.F. Chen
;
Z.Q. Sun
;
Y.M. Liu
;
K.R. Zhu
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/22
Band
offset
HfTiO/InGaZnO
heterojunction
X-ray
photoelectron
spectroscopy
Thin
film
transistors
Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment
期刊论文
Journal of Alloys and Compounds, 2015, 卷号: Vol.647, 页码: 1035-1039
作者:
J.G. Lv
;
X.F. Chen
;
Z.Q. Sun
;
P.H. Wang
;
X.S. Chen
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
Band
offset
InGaZnO/Si
heterojunctions
X-ray
photoelectron
spectroscopy
Thin
film
transistors
Synthesis, Characterization, and Crystal Structure of One Novel Indolo[3,2-b] carbazole Derivative
期刊论文
CHINESE JOURNAL OF STRUCTURAL CHEMISTRY, 2013, 卷号: Vol.32 No.11, 页码: 1611-1616
作者:
Ding Ai-Xiang
;
Yang Jia-Xian
;
Yang Peng
;
Ren Jun
;
Wang Hao-Wei
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/22
THIN-FILM TRANSISTORS
HIGH-MOBILITY
SEMICONDUCTORS
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