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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 专题：北京航空航天大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure 期刊论文 CHINESE OPTICS LETTERS, 2018, 卷号: 16 作者:  Jia, Yan;  Yu, Qingnan;  Li, Fang;  Wang, Mingqing;  Lu, Wei 收藏  |  浏览/下载：14/0  |  提交时间：2019/12/30 Gallium compounds  III-V semiconductors  Indium  Indium alloys  Optical pumping  Quantum well lasers  Semiconducting indium gallium arsenide  Semiconductor alloys  Semiconductor quantum wells  Strain  Edge-emitting device  Experimental investigations  Gain characteristic  Material growth  Multiple wavelengths  Photoluminescence spectrum  Quantum well structures  Strain configurations  Gallium alloys   Ultra-wide and nearly flat-top gain spectrum in asymmetric quantum-well structure for InGaAs tunable lasers 会议论文 TENTH INTERNATIONAL CONFERENCE ON INFORMATION OPTICS AND PHOTONICS, 2018-01-01 作者:  Yu, Q-N;  Li, X.;  Zheng, M.;  Lu, W.;  Zhang, X. 收藏  |  浏览/下载：18/0  |  提交时间：2019/12/30 gain  flat top  wide gain bandwidth  InGaAs  asymmetrical quantum well  Indium-rich islands  optically pump  tunable lasers   InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance 期刊论文 ACS PHOTONICS, 2018, 卷号: 5, 页码: 4896-4902 作者:  Yu, Qingnan;  Li, Xue;  Jia, Yan;  Lu, Wei;  Zheng, Ming 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/30 tunable semiconductor lasers  well-island composite quantum-confined structure  In GaAs/GaAs material  gain characteristics  flat top  indium-rich islands   Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure 期刊论文 AIP ADVANCES, 2017, 卷号: 7 作者:  Yu, Q.N.;  Jia, Y.;  Lu, W.;  Wang, M.Q.;  Li, F. 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/30