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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures 期刊论文 acs nano., 2016, 卷号: 10, 期号: 3, 页码: 3852−3858 Kenan Zhang; Tianning Zhang; Guanghui Cheng; Tianxin Li; Shuxia Wang; Wei Wei; Xiaohao Zhou; Weiwei Yu; Yan Sun; Peng Wang; Dong Zhang; Changgan Zeng; Xingjun Wang; Weida Hu; Hong Jin Fan; Guozhen Shen; Xin Chen; Xiangfeng Duan; Kai Chang; Ning Dai 收藏  |  浏览/下载：43/0  |  提交时间：2017/03/10 Generation of Rashba Spin−Orbit Coupling in CdSe Nanowire by Ionic Liquid Gate 期刊论文 Nano Letters, 2015, 卷号: 15, 页码: 1152−1157 Shan Zhang; Ning Tang; Weifeng Jin; Junxi Duan; Xin He; Xin Rong; Chenguang He; Lisheng Zhang; Xudong Qin; Lun Dai; Yonghai Chen; Weikun Ge; Bo Shen 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/23 Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：101/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs 期刊论文 人工晶体学报, 2005, 卷号: 34, 期号: 6, 页码: 1006-1010 作者:  NING Jin;  LIU Xingfang 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/23