Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs

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	Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs
	NING Jin; LIU Xingfang
刊名	人工晶体学报
	2005
卷号	34 期号:6 页码:1006-1010
中文摘要	homoepitaxial growth of4h-sic on off-oriented si-face （0001） 4h-sic substrates was performed at 1500℃ by using the step controlled epitaxy. ti/4h-sic schottky barrier diodes （sbds） with blocking voltage over lkv have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. the diode rectification ratio of forward to reverse （defined at ± 1v） is over 107 at room temperature and over 10^2 at 538k. their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. the ideality factor and schottky barrier height obtained at room temperature are 1.33 and 0. 905ev, respectively. the sbds have on-state current density of 150a/cm^2 at a forward voltage drop of about 2.0v. the specific on-resistance for the rectifier is found to be as 7.9mω · cm^2 and its variation with temperature is t^2.0.
英文摘要	homoepitaxial growth of4h-sic on off-oriented si-face （0001） 4h-sic substrates was performed at 1500℃ by using the step controlled epitaxy. ti/4h-sic schottky barrier diodes （sbds） with blocking voltage over lkv have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. the diode rectification ratio of forward to reverse （defined at ± 1v） is over 107 at room temperature and over 10^2 at 538k. their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. the ideality factor and schottky barrier height obtained at room temperature are 1.33 and 0. 905ev, respectively. the sbds have on-state current density of 150a/cm^2 at a forward voltage drop of about 2.0v. the specific on-resistance for the rectifier is found to be as 7.9mω · cm^2 and its variation with temperature is t^2.0.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:04:13导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:04:13z (gmt). no. of bitstreams: 1 4429.pdf: 205822 bytes, checksum: a37fb9d9ebcc2316b6f9566c0b74db4a (md5) previous issue date: 2005; institute of semiconductors, chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16913]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	NING Jin,LIU Xingfang. Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs[J]. 人工晶体学报,2005,34(6):1006-1010.
APA	NING Jin,&LIU Xingfang.(2005).Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs.人工晶体学报,34(6),1006-1010.
MLA	NING Jin,et al."Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs".人工晶体学报 34.6(2005):1006-1010.