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XPS study of impurities in Si-doped AlN film 期刊论文
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：29/0  |  提交时间：2017/03/10
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10
Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文
journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang
收藏  |  浏览/下载：20/0  |  提交时间：2017/03/10
GaN high electron mobility transistors with AlInN back barriers 期刊论文
journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19
X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10
Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文
vacuum, 2016, 卷号: 129, 页码: 99-104
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
收藏  |  浏览/下载：14/0  |  提交时间：2017/03/10
Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文
journal of alloys and compounds, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; H. Yang; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载：13/0  |  提交时间：2016/03/23
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
journal of applied physics, 2015, 卷号: 117, 页码: 055709
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/23
Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文
applied optics, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711
X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; L. C. LE; W. LIU; X. G. HE; X. J. LI; F. LIANG; L. Q. ZHANG; J. Q. LIU; H. YANG
收藏  |  浏览/下载：18/0  |  提交时间：2016/03/23
The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
physica status solidi a-applications and materials science, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
P. Chen; D.G. Zhao; D.S. Jiang; J.J. Zhu; Z.S. Liu; L.C. Le; J. Yang; X. Li; L. Q. Zhang; J.P. Liu; S.M. Zhang; H. Yang
收藏  |  浏览/下载：9/0  |  提交时间：2016/03/22
Enhanced light emission from Ge quantum dots in photonic crystal ring resonator 期刊论文
optics express, 2014, 卷号: 22, 期号: 10, 页码: 12248-12254
Zhang, Y; Zeng, C; Li, DP; Zhao, XJ; Gao, G; Yu, JZ; Xia, JS
收藏  |  浏览/下载：14/0  |  提交时间：2015/03/25

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