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科研机构
半导体研究所 [21]
内容类型
期刊论文 [20]
会议论文 [1]
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2015 [1]
2011 [1]
2010 [2]
2009 [1]
2008 [6]
2006 [2]
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半导体物理 [21]
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Intercalation pseudo-capacitive TiNb2O7@carbon electrode for high-performance lithium ion hybrid electrochemical supercapacitors with ultrahigh energy density
期刊论文
nano energy, 2015, 卷号: 15, 页码: 104-115
Xianfu Wang
;
GuozhenShenn
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浏览/下载:25/0
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提交时间:2016/03/29
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Origins of magnetism in transition metal doped Cul
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043713
Wang J (Wang Jing)
;
Li JB (Li Jingbo)
;
Li SS (Li Shu-Shen)
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  |  
浏览/下载:86/0
  |  
提交时间:2010/10/11
AUGMENTED-WAVE METHOD
OPTICAL-PROPERTIES
CUPROUS HALIDES
COPPER HALIDES
BAND-STRUCTURE
CUBR
PHOTOEMISSION
PRESSURE
DENSITY
STATES
Room-Temperature Ferromagnetism in Co-Doped In2O3 Nanocrystals
期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 41, 页码: 17569-17573
Meng XQ (Meng Xiuqing)
;
Tang LM (Tang Liming)
;
Li JB (Li Jingbo)
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浏览/下载:52/0
  |  
提交时间:2010/11/02
THIN-FILMS
QUANTUM DOTS
AB-INITIO
INDIUM
ZNO
SEMICONDUCTORS
ACTIVATION
OXIDATION
ELECTRON
ENERGY
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:
Wei HY
;
Jiao CM
;
Song HP
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浏览/下载:236/41
  |  
提交时间:2010/03/08
aluminium compounds
conduction bands
energy gap
high electron mobility transistors
III-V semiconductors
magnesium compounds
passivation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Transmission properties of electron in quantum rings
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 6, 页码: art. no. 063723
Li, CL
;
Yang, FH
;
Feng, SL
;
Wang, XM
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浏览/下载:110/1
  |  
提交时间:2010/03/08
PERSISTENT CURRENTS
ENERGY
STATES
WELL
FLUX
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL
;
Zeng, YP
;
Wang, BQ
;
Zhu, ZP
;
Wang, ZG
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  |  
浏览/下载:54/6
  |  
提交时间:2010/03/08
molecular beam epitaxy
semiconducting III-V materials
high electron mobility transistors
Dislocation scattering in AlxGa1-xN/GaN heterostructures
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ
;
Liu, XL
;
Han, XX
;
Yuan, HR
;
Wang, J
;
Guo, Y
;
Song, HP
;
Zheng, GL
;
Wei, HY
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
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  |  
浏览/下载:61/0
  |  
提交时间:2010/03/08
aluminium compounds
dislocation density
electron mobility
gallium compounds
III-V semiconductors
interface roughness
semiconductor heterojunctions
two-dimensional electron gas
wide band gap semiconductors
Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 19, 页码: art. no. 191118
Zhang JY
;
Cai LE
;
Zhang BP
;
Li SQ
;
Lin F
;
Shang JZ
;
Wang DX
;
Lin KC
;
Yu JZ
;
Wang QM
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  |  
浏览/下载:25/1
  |  
提交时间:2010/03/08
gallium compounds
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