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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 4, 页码: art. no. 042901 Wu GG; Li HR; Liang K; Yang R; Cao XL; Wang HY; An JM; Hu XW; Han DJ 收藏  |  浏览/下载：76/31  |  提交时间：2010/03/08 GAMMA-RAY SPECTROSCOPY  X-RAY  SPECTROMETERS   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文 2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 strip detectors  silicon detectors  annealing  simulation  irradiation  N-EFF  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 期刊论文 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：28/0  |  提交时间：2010/08/12 strip detectors  silicon detectors  annealing  simulation  irradiation  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS  N-EFF