Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors
Wu GG ; Li HR ; Liang K ; Yang R ; Cao XL ; Wang HY ; An JM ; Hu XW ; Han DJ
刊名chinese physics letters
2009
卷号26期号:4页码:art. no. 042901
关键词GAMMA-RAY SPECTROSCOPY X-RAY SPECTROMETERS
ISSN号0256-307x
通讯作者liang k beijing normal univ coll nucl sci & technol key lab beam technol & mat modificat minist educ beijing 100875 peoples r china. e-mail address: lk@bnu.edu.cn
中文摘要anode floating voltage is predicted and investigated for silicon drift detectors (sdds) with an active area of 5 mm(2) fabricated by a double-side parallel technology. it is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. the anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (-50 v) of the sdd. theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p(+) inner ring and the n(+) anode. a fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.
学科主题半导体物理
收录类别SCI
资助信息national natural science foundation of china 60776057 beijing municipal administration supported by the national natural science foundation of china under grant no 60776057, and the beijing municipal administration.
语种英语
公开日期2010-03-08
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/7275]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wu GG,Li HR,Liang K,et al. Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors[J]. chinese physics letters,2009,26(4):art. no. 042901.
APA Wu GG.,Li HR.,Liang K.,Yang R.,Cao XL.,...&Han DJ.(2009).Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors.chinese physics letters,26(4),art. no. 042901.
MLA Wu GG,et al."Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors".chinese physics letters 26.4(2009):art. no. 042901.
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