Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors | |
Wu GG ; Li HR ; Liang K ; Yang R ; Cao XL ; Wang HY ; An JM ; Hu XW ; Han DJ | |
刊名 | chinese physics letters |
2009 | |
卷号 | 26期号:4页码:art. no. 042901 |
关键词 | GAMMA-RAY SPECTROSCOPY X-RAY SPECTROMETERS |
ISSN号 | 0256-307x |
通讯作者 | liang k beijing normal univ coll nucl sci & technol key lab beam technol & mat modificat minist educ beijing 100875 peoples r china. e-mail address: lk@bnu.edu.cn |
中文摘要 | anode floating voltage is predicted and investigated for silicon drift detectors (sdds) with an active area of 5 mm(2) fabricated by a double-side parallel technology. it is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. the anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (-50 v) of the sdd. theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p(+) inner ring and the n(+) anode. a fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties. |
学科主题 | 半导体物理 |
收录类别 | SCI |
资助信息 | national natural science foundation of china 60776057 beijing municipal administration supported by the national natural science foundation of china under grant no 60776057, and the beijing municipal administration. |
语种 | 英语 |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/7275] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Wu GG,Li HR,Liang K,et al. Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors[J]. chinese physics letters,2009,26(4):art. no. 042901. |
APA | Wu GG.,Li HR.,Liang K.,Yang R.,Cao XL.,...&Han DJ.(2009).Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors.chinese physics letters,26(4),art. no. 042901. |
MLA | Wu GG,et al."Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors".chinese physics letters 26.4(2009):art. no. 042901. |
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