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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504 Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：212/46  |  提交时间：2010/10/11 INAS/ALSB QUANTUM-WELLS  LOW-POWER APPLICATIONS  HEMTS  MODULATION  HETEROSTRUCTURES  TECHNOLOGY  CHANNEL  VOLTAGE  MASS   Thermal induced facet destructive feature of quantum cascade lasers 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 14, 页码: art. no. 141117 Zhang QD (Zhang Quande); Liu FQ (Liu Feng-Qi); Zhang W (Zhang Wei); Lu QY (Lu Quanyong); Wang LJ (Wang Lijun); Li L (Li Lu); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：123/17  |  提交时间：2010/04/28 laser beam effects  quantum cascade lasers  thermal conductivity  MU-M  TEMPERATURE  OPERATION  PERFORMANCE   Structural and magnetic properties of insulating Zn1-xCoxO thin films 期刊论文 journal of applied physics, 2004, 卷号: 96, 期号: 9, 页码: 5093-5096 Yin Z; Chen NF; Chai CL; Yang F 收藏  |  浏览/下载：126/24  |  提交时间：2010/03/09 DOPED ZNO FILMS   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 期刊论文 journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 556-559 Liu JP; Kong MY; Liu XF; Li JP; Huang DD; Li LX; Sun DZ 收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12 strain relaxation  Si SiGe  interdiffusion  morphological evolution  QUANTUM DOTS  RELAXATION  INAS  STRANSKI-KRASTANOW GROWTH   Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Liu JP; Kong MY; Liu XF; Li JP; Huang DD; Li LX; Sun DZ 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 STRANSKI-KRASTANOW GROWTH  QUANTUM DOTS  RELAXATION  INAS