Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

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	Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing
	Liu JP ; Kong MY ; Liu XF ; Li JP ; Huang DD ; Li LX ; Sun DZ
刊名	journal of crystal growth
	1999
卷号	201 期号:0 页码:556-559
关键词	strain relaxation Si SiGe interdiffusion morphological evolution QUANTUM DOTS RELAXATION INAS STRANSKI-KRASTANOW GROWTH
ISSN号	0022-0248
通讯作者	kong my,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	strain relaxation in initially flat sige film on si(1 0 0) during rapid thermal annealing is studied. the surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. it is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. it is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the sige/si interface during high-temperature annealing. (c) 1999 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12902]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu JP,Kong MY,Liu XF,et al. Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing[J]. journal of crystal growth,1999,201(0):556-559.
APA	Liu JP.,Kong MY.,Liu XF.,Li JP.,Huang DD.,...&Sun DZ.(1999).Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing.journal of crystal growth,201(0),556-559.
MLA	Liu JP,et al."Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing".journal of crystal growth 201.0(1999):556-559.