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The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 16, 页码: 163708
Li, X. J.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Le, L. C.; Yang, J.; He, X. G.; Zhang, S. M.; Zhang, B. S.; Liu, J. P.; Yang, H.
收藏  |  浏览/下载：18/0  |  提交时间：2015/03/19
A new method to measure the carrier concentration of p-GaN 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M; Zhao DG
收藏  |  浏览/下载：66/7  |  提交时间：2011/07/05
Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation 期刊论文
journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7428-7431
Bai AQ (Bai Anqi); Cheng BW (Cheng Buwen); Wang XF (Wang Xiaofeng); Xue CL (Xue Chunlai); Zuo YH (Zuo Yuhua); Wang QM (Wang Qiming)
收藏  |  浏览/下载：20/0  |  提交时间：2010/11/30
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802
Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：28/0  |  提交时间：2010/11/02
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May)
收藏  |  浏览/下载：96/3  |  提交时间：2010/04/22
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG
收藏  |  浏览/下载：49/4  |  提交时间：2010/03/08
Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 12, 页码: art.no.125007
Liu, JQ (Liu, J. Q.); Wang, JF (Wang, J. F.); Qiu, YX (Qiu, Y. X.); Guo, X (Guo, X.); Huang, K (Huang, K.); Zhang, YM (Zhang, Y. M.); Hu, XJ (Hu, X. J.); Xu, Y (Xu, Y.); Xu, K (Xu, K.); Huang, XH (Huang, X. H.); Yang, H (Yang, H.)
收藏  |  浏览/下载：244/114  |  提交时间：2010/03/08

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