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Intersubband absorption properties of high al content alxga1?xn/gan multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition 期刊论文
Nanoscale research letters, 2012, 卷号: 7, 期号: 1
作者:  Sun,He Hui;  Guo,Feng Yun;  Li,Deng Yue;  Wang,Lu;  Wang,Dong Bo
收藏  |  浏览/下载:35/0  |  提交时间:2019/05/09
Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 111, 期号: 1
作者:  Huang, CC;  Xu, FJ;  Song, J;  Xu, ZY;  Wang, JM
收藏  |  浏览/下载:11/0  |  提交时间:2013/03/18
Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9
Sun, HH; Guo, FY; Li, DY; Wang, L; Zhao, DG; Zhao, LC
收藏  |  浏览/下载:20/0  |  提交时间:2013/09/17
Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 1
Sun, HH; Guo, FY; Li, DY; Wang, L; Wang, DB; Zhao, LC
收藏  |  浏览/下载:31/0  |  提交时间:2013/09/18


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