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半导体研究所 [7]
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期刊论文 [16]
会议论文 [1]
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2011 [17]
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半导体材料 [2]
半导体物理 [2]
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Spatial hole burning degradation of algaas/gaas laser diodes
期刊论文
Applied physics letters, 2011, 卷号: 99, 期号: 10, 页码: 3
作者:
Qiao, Y. B.
;
Feng, S. W.
;
Xiong, C.
;
Wang, X. W.
;
Ma, X. Y.
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2019/05/12
Aluminium compounds
Carrier density
Cathodoluminescence
Gallium arsenide
Iii-v semiconductors
Optical hole burning
Optical microscopy
Quantum well lasers
Semiconductor epitaxial layers
X-ray diffraction
Metal electrode influence on the wet selective etching of gaas/algaas
期刊论文
Journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 4
作者:
Wang Jie
;
Han Qin
;
Yang Xiao-Hong
;
Wang Xiu-Ping
;
Ni Hai-Qiao
收藏
  |  
浏览/下载:120/0
  |  
提交时间:2019/05/12
Aluminium compounds
Chromium alloys
Copper alloys
Electrochemical analysis
Electrochemical electrodes
Etching
Gallium arsenide
Gold alloys
Iii-v semiconductors
Metallic thin films
Titanium alloys
Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas
期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 25
作者:
Sun, YF (孙云飞)
;
Sun, JD (孙建东)
;
Zhou, Y (周宇)
;
Tan, RB (谭仁兵)
;
Zeng, CH (曾春红)
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  |  
浏览/下载:39/0
  |  
提交时间:2012/08/24
aluminium compounds
gallium compounds
high electron mobility transistors
III-V semiconductors
photoconductivity
photodetectors
semiconductor device noise
terahertz wave detectors
wide band gap semiconductors
Alkali metal compounds of a gallium(I) carbene analogue {:Ga N(Ar)C(Me) (2)} (Ar=2,6-(i)Pr(2)C(6)H(3))
期刊论文
Journal of Organometallic Chemistry, 2011, 卷号: 696, 期号: 7, 页码: 1450-1455
Y. Y. Liu
;
S. G. Li
;
X. J. Yang
;
Q. S. Li
;
Y. M. Xie
;
H. F. Schaefer
;
B. A. Wu
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  |  
浏览/下载:30/0
  |  
提交时间:2012/06/06
Gallium(I)
NHCs analogue
Alkali metals
Ga-M bond
alpha-diimine ligands
zinc-bonded compound
structural-characterization
coordination chemistry
ring-systems
molecular-structure
gallyl complexes
stable compound
reactivity
heterocycles
Alkali metal compounds of a gallium(I) carbene analogue {:Ga[N(Ar)C(Me)]2} (Ar = 2,6-iPr2C6H3)
期刊论文
J. Organomet. Chem., 2011, 卷号: 696, 期号: 7, 页码: 1450-1455
作者:
Yang XJ(杨晓娟)
;
Yang XJ(杨晓娟)
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浏览/下载:9/0
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提交时间:2012/09/20
Gallium(I)
NHCs analogue
Alkali metals
GaeM bond
Schottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3
期刊论文
journal of vacuum science technology b, 2011
Wang, Runsheng
;
Xu, Min
;
Ye, Peide D.
;
Huang, Ru
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  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
aluminium compounds
atomic layer deposition
Fermi level
gallium arsenide
indium compounds
MOSFET
Schottky barriers
METAL SOURCE/DRAIN
MOSFETS
GaN crystals prepared through solid-state metathesis reaction from NaGaO and BN under high pressure and high temperature
期刊论文
Journal of Alloys and Compounds, 2011, 卷号: Vol.509 No.7, 页码: L124-L127
-
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  |  
浏览/下载:1/0
  |  
提交时间:2019/03/01
Gallium
nitride
Solid-state
metathesis
reaction
High
pressure
and
high
temperature
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Influence of window layer thickness on double layer antireflection coating for triple junction solar cells
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 66001
Wang, Lijuan
;
Zhan, Feng
;
Yu, Ying
;
Zhu, Yan
;
Liu, Shaoqing
;
Huang, Shesong
;
Ni, Haiqiao
;
Niu, Zhichuan
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  |  
浏览/下载:21/0
  |  
提交时间:2012/06/14
Antireflection coatings
Coatings
Gallium
Optimization
Silicon compounds
Titanium dioxide
Transfer matrix method
Zinc sulfide
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