CORC

在结果中检索

CORC

浏览/检索结果: 共179条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Investigation of preparation and characterization of gan films on sapphire (0001) substrates 期刊论文
Applied surface science, 2002, 卷号: 202, 期号: 3-4, 页码: 295-300
作者:  Yang, YG;  Ma, HL;  Xue, CS;  Zhuang, HZ;  Hao, XT
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite gan epilayers 期刊论文
Applied physics letters, 2002, 卷号: 81, 期号: 23, 页码: 4389-4391
作者:  Xu, SJ;  Zheng, LX;  Cheung, SH;  Xie, MH;  Tong, SY
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Nitrogen vacancy scattering in gan grown by metal-organic vapor phase epitaxy 期刊论文
Solid-state electronics, 2002, 卷号: 46, 期号: 12, 页码: 2069-2074
作者:  Chen, Z;  Yuan, HR;  Lu, DC;  Sun, XH;  Wan, SK
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates 期刊论文
Journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
作者:  Shen, XM;  Fu, Y;  Feng, G;  Zhang, BS;  Feng, ZH
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Formation of gan film by ammoniating ga2o3 deposited on si substrate with electrophoresis 期刊论文
International journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4267-4270
作者:  Yang, L;  Xue, CS;  Zhuang, HZ;  Li, HX;  Wei, QQ
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Symmetry in the diagonal self-assembled inas quantum wire arrays on inp substrate 期刊论文
International journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4423-4426
作者:  Wu, J;  Zeng, YP;  Cui, LJ;  Zhu, ZP;  Wang, BX
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
Electrical properties of Si1-x-yGexCy films grown by ion implantation and solid phase epitaxy 会议论文
Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Liu, XQ;  Zhen, CM;  Wang, YY;  Zhang, J;  Pu, YJ
收藏  |  浏览/下载：2/0  |  提交时间：2015/07/31
Growth mode and strain evolution during inn growth on gan(0001) by molecular-beam epitaxy 期刊论文
Applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
作者:  Ng, YF;  Cao, YG;  Xie, MH;  Wang, XL;  Tong, SY
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Interface-related in-plane optical anisotropy in gaas/alxga1-xas single-quantum-well structures studied by reflectance difference spectroscopy 期刊论文
Physical review b, 2002, 卷号: 66, 期号: 19, 页码: 5
作者:  Chen, YH;  Ye, XL;  Wang, JZ;  Wang, ZG;  Yang, Z
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
Selectively excited photoluminescence of gaas1-xsbx/gaas single quantum wells 期刊论文
Applied physics letters, 2002, 卷号: 81, 期号: 20, 页码: 3795-3797
作者:  Luo, XD;  Hu, CY;  Xu, ZY;  Luo, HL;  Wang, YQ
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12

©版权所有 ©2017 CSpace - Powered by CSpace