Electrical properties of Si1-x-yGexCy films grown by ion implantation and solid phase epitaxy

	Electrical properties of Si1-x-yGexCy films grown by ion implantation and solid phase epitaxy
	Liu, XQ; Zhen, CM; Wang, YY; Zhang, J; Pu, YJ; Guo, YP
	2002-11-20
会议名称	Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
会议日期	JUN 10-14, 2002
会议地点	XIAN, PEOPLES R CHINA
期号	28-29
页码	4234-4237
通讯作者	Liu, XQ (reprint author), Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China.
会议录	INTERNATIONAL JOURNAL OF MODERN PHYSICS B
会议录出版地	SINGAPORE
学科主题	Physics
语种	英语
ISSN号	0217-9792
WOS记录号	WOS:000179800800012
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/113335]
专题	物理科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Liu, XQ,Zhen, CM,Wang, YY,et al. Electrical properties of Si1-x-yGexCy films grown by ion implantation and solid phase epitaxy[C]. 见:Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002). XIAN, PEOPLES R CHINA. JUN 10-14, 2002.