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浏览/检索结果: 共12条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802 作者:  Jun Wang;  Shiwei Liang;  Linfeng Deng;  Xin Yin;  Z. John Shen 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/13 Silicon carbide  Predictive models  Spontaneous emission  Junctions  SPICE  Temperature  Numerical models  Bipolar junction transistor (BJT)  proportional base driver  SPICE model  surface recombination effect  4H-SiC   An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect 期刊论文 IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802 作者:  Wang, J;  Liang, SW;  Deng, LF;  Yin, X;  Shen, ZJ 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Bipolar junction transistor (BJT)  proportional base driver  SPICE model  surface recombination effect  4H-SiC   An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect. 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802 作者:  Wang, J;  Liang, SW;  Deng, LF;  Yin, X;  Shen, ZJ 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 4H-SiC  Bipolar junction transistor (BJT)  Junctions  Numerical models  Predictive models  proportional base driver  Silicon carbide  SPICE  SPICE model  Spontaneous emission  surface recombination effect  Temperature   An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range 期刊论文 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 卷号: Vol.7 No.3, 页码: 1727-1735 作者:  Liang, SW;  Wang, J;  Deng, LF;  Shi, YZ;  Yin, X 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 4H-SiC  bipolar junction transistor (BJT)  boost converter  driver loss  gate driver   双极型晶体管损坏与强电磁脉冲注入位置的关系 期刊论文 2010, 2010 周怀安; 杜正伟; 龚克; ZHOU Huai-an; DU Zheng-wei; GONG Ke 收藏  |  浏览/下载：2/0 双极型晶体管在强电磁脉冲作用下的瞬态响应 期刊论文 2010, 2010 周怀安; 杜正伟; 龚克; ZHOU Huai-an; DU Zheng-wei; GONG Ke 收藏  |  浏览/下载：4/0 Electrical performance analysis of electron irradiated SiGe HBT and Si BJT 期刊论文 2010, 2010 Huang Wentao; Wang Jilin; Liu Zhinong; Chen Changchun; Chen Peiyi; Qian Peixin; Meng Xiangti 收藏  |  浏览/下载：2/0 Effects of high power electromagnetic pulse injected from base on bipolar junction transistor 期刊论文 2010, 2010 Chen Xi; Du Zheng-wei; Gong Ke 收藏  |  浏览/下载：3/0 Transient response of bipolar junction transistor under intense electromagnetic pulse 期刊论文 2010, 2010 Zhou Huai-an; Du Zheng-wei; Gong Ke 收藏  |  浏览/下载：3/0 A Modified Behavior SPICE Model for SiC BJT 会议论文 THIRTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2018), 238-243, 2018 作者:  Liang, SW;  Wang, J;  Peng, ZG;  Chen, GH;  Yin, X 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Silicon Carbide (SiC)  Bipolar Junction Transistor (BJT)  Modeling  SPICE