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长春光学精密机械与物... [1]
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会议论文 [1]
发表日期
2011 [1]
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Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE)
会议论文
Chen X.
;
Zhang Z.
;
Yao B.
;
Jiang M.
;
Wang S.
;
Li B.
;
Shan C.
;
Liu L.
;
Zhao D.
;
Shen D.
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提交时间:2013/03/25
Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux
and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux
and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.
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