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Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 409, 期号: 0, 页码: 51-55
作者:  Zhou, K(周堃);  Ikeda, M;  Liu, JP(刘建平);  Zhang, SM(张书明);  Li, ZC(李增成)
收藏  |  浏览/下载:27/0  |  提交时间:2015/02/03
Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 416, 页码: 7
作者:  Zhou, K(周堃);  Liu, JP(刘建平);  Ikeda, M;  Zhang, SM(张书明);  Li, DY(李德尧)
收藏  |  浏览/下载:14/0  |  提交时间:2015/12/31
Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 期号: 0, 页码: 7-10
作者:  Li, DY(李德尧);  Zhang, SM(张书明);  Liu, JP(刘建平);  Zhang, LQ(张立群);  Yang, H(杨辉)
收藏  |  浏览/下载:12/0  |  提交时间:2014/01/13
Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing 期刊论文
2013, 卷号: 16, 页码: 738-741
作者:  Lin, T.;  Chen, R.G.;  Zhang, H.Q.;  Li, C.;  Ma, X.J.
收藏  |  浏览/下载:17/0  |  提交时间:2019/12/20
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载:110/2  |  提交时间:2010/04/22
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载:127/4  |  提交时间:2010/04/13
Annealing behaviors of long-wavelength inas/gaas quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
Journal of crystal growth, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
作者:  Liang, S.;  Zhu, H. L.;  Ye, X. L.;  Wang, W.
收藏  |  浏览/下载:17/0  |  提交时间:2019/05/12
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
作者:  Ye XL;  Liang S
收藏  |  浏览/下载:32/4  |  提交时间:2010/03/08
Photoluminescence study of algainp/gainp quantum well intermixing induced by zinc impurity diffusion 期刊论文
Journal of crystal growth, 2007, 卷号: 309, 期号: 2, 页码: 140-144
作者:  Lin, T.;  Zheng, K.;  Wang, C. L.;  Ma, X. Y.
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12
Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion 期刊论文
journal of crystal growth, 2007, 卷号: 309, 期号: 2, 页码: 140-144
Lin, T; Zheng, K; Wang, CL; Ma, XY
收藏  |  浏览/下载:38/3  |  提交时间:2010/03/08


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