Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy

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	Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy
	Zhou, K(周堃); Liu, JP(刘建平); Ikeda, M; Zhang, SM(张书明); Li, DY(李德尧); Zhang, LQ(张立群); Zeng, C(曾畅); Yang, H(杨辉)
刊名	JOURNAL OF CRYSTAL GROWTH
	2015
卷号	416 页码:7
关键词	Surface structure Metalorganic vapor phase epitaxy Nitrides Semiconducting III-V materials
通讯作者	Liu, JP (刘建平)
英文摘要	Surface morphology of homoepitaxial GaN (0001) grown by metalorganic vapor phase epitaxy was studied. Selective growth was observed on the homoepitaxial GaN layer grown on as received GaN substrate and was attributed to the existence of substrate surface defects. The steps were pinned by defects and meandered. Due to the pinning effect, the step pattern developed to a wavy surface with a strip-like feature along the [11 ($) over bar0] direction during the subsequent growth of a thick n-GaN layer. Because of the surface undulations, the emission of InGaN/GaN multiple quantum wells grown on the n-GaN layer was inhomogeneous. The surface defects on GaN substrate could be removed by dry etching and the homoepitaxial layer on the etched substrate showed a smooth morphology and straight atomic steps. As a result, the emission of the InGaN/GaN MQWs became homogeneous. (C) 2015 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3389]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Zhou, K,Liu, JP,Ikeda, M,et al. Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2015,416:7.
APA	Zhou, K.,Liu, JP.,Ikeda, M.,Zhang, SM.,Li, DY.,...&Yang, H.(2015).Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy.JOURNAL OF CRYSTAL GROWTH,416,7.
MLA	Zhou, K,et al."Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy".JOURNAL OF CRYSTAL GROWTH 416(2015):7.