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CORC

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A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 120, 页码: 389-394
作者:  Liu, Yan;  Lin, Zhaojun;  Cui, Peng;  Fu, Chen;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2018, 卷号: 123, 页码: 223-227
作者:  Yang, Ming;  Lv, Yuanjie;  Cui, Peng;  Liu, Yan;  Fu, Chen
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 3, 页码: 1038-1044
作者:  Cui, Peng;  Liu, Huan;  Lin, Wei;  Lin, Zhaojun;  Cheng, Aijie
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9
作者:  Liu, Yan;  Lin, Zhao-Jun;  Lv, Yuan-Jie;  Cui, Peng;  Fu, Chen
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 103, 页码: 113-120
作者:  Liu, Huan;  Cheng, Aijie;  Lin, Zhaojun;  Cui, Peng;  Liu, Yan
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815
作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 110, 页码: 289-295
作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Effects of Floating Gate Structures on the Two-Dimensional Electron Gas Density and Electron Mobility in AlGaN/AlN/GaN Heterostructure Field-Effect Transistors 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2017, 卷号: 71, 期号: 12, 页码: 963-967
作者:  Zhao, Jingtao;  Zhao, Zhenguo;  Chen, Zidong;  Lin, Zhaojun;  Xu, Fukai
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/12
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Chinese Physics B, 2017, 期号: 09, 页码: 393-399
作者:  Liu Y(刘艳);  Lin ZJ(林兆军);  Lv YJ(吕元杰);  Cui P(崔鹏);  Fu C(付晨)
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/12

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